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Semiconductor device, manufacturing method thereof and electronic device

A manufacturing method and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as passivation layer cracks, improve toughness, improve performance and reliability, and improve integration problem effect

Active Publication Date: 2017-12-15
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, many problems still need to be solved, for example, the chip package integration (Chip Package Integration, referred to as CPI) problem caused by crack defects in the passivation layer

Method used

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  • Semiconductor device, manufacturing method thereof and electronic device
  • Semiconductor device, manufacturing method thereof and electronic device
  • Semiconductor device, manufacturing method thereof and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Below, refer to Figure 4 The structure of a semiconductor device according to an embodiment of the present invention is described in detail, wherein, Figure 4 A schematic cross-sectional view of a semiconductor device according to an embodiment of the present invention is shown.

[0067] The semiconductor device proposed by the present invention mainly includes the following components:

[0068] First, a substrate (not shown) is included.

[0069] Wherein, the base includes a semiconductor substrate, on which one or more active devices and passive devices can be formed, and the active devices can be transistors, diodes and other known active devices , the passive components can be resistors, capacitors and inductors and other known passive components, the substrate is connected to the pad to form an integrated circuit, but the substrate does not affect other aspects of the present invention The structure brings a key influence, so no specific limitation is imposed ...

Embodiment 2

[0105] The present invention also provides a method for manufacturing the foregoing semiconductor device, and the following continues to refer to Figure 4 as well as Figure 5 The manufacturing method of the semiconductor device of the present invention is described in detail.

[0106] The manufacturing method of semiconductor device of the present invention mainly comprises the following steps:

[0107] In step S501, a substrate is provided;

[0108] In step S502, several pad structures are formed on the base, wherein each of the pad structures is provided on the base with spaced protrusions, and the side walls of the pad structures and the base outside The surface forms a step angle;

[0109] In step S503, depositing and forming a top passivation layer covering the pad structure and the substrate around its outer side, wherein the top passivation layer includes a first oxide layer, a nitrogen layer stacked sequentially from bottom to top. A doped carbide layer and a fir...

Embodiment 3

[0148] Another embodiment of the present invention provides an electronic device, which includes a semiconductor device, the semiconductor device is the semiconductor device in the first embodiment above, or a semiconductor device manufactured according to the method for manufacturing a semiconductor device described in the second embodiment .

[0149] The electronic device can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP, etc. It is an intermediate product with the above-mentioned semiconductor device, for example: a mobile phone motherboard with the integrated circuit, etc.

[0150] The electronic device also has the above-mentioned advantages due to the higher performance of the included semiconductor devices.

[0151] in, Figure 6 An example of a mobile phone handset is shown. The mobile phone handset 400 is provided wit...

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PUM

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Abstract

The invention provides a semiconductor device, a manufacturing method thereof and an electronic device. The semiconductor device comprises a substrate, a plurality of welding pad structures and a top part passivation layer, wherein the welding pad structures are disposed on the substrate at intervals in a protruding manner, and the side wall of each welding pad structure and the surface of the substrate on the outer side of the welding pad structure form a step angle; and the top part passivation layer covers the welding pad structures and the substrate on the outer periphery of the welding pad structures, and the top part passivation layer comprises a first oxide layer, a nitrogen-doped carbide layer and a first nitride layer which are laminated from bottom to top in sequence. The semiconductor device structure provided by the invention can effectively eliminate the passivation layer crack defects of advanced WLBGA products, and further improves the chip package integration problem, thereby improving the performance and reliability of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] Wafer Level Ball Grid Array (WLBGA) packaging mode has become the most advanced packaging technology, because it has the advantages of saving space and supporting the maximum bonding requirements, in order to maximize the function of the chip, the more More and more users prefer WLBGA as the package mode. However, many problems still need to be solved, for example, the problem of Chip Package Integration (CPI for short) caused by crack defects in the passivation layer. [0003] Therefore, it is necessary to propose a new semiconductor device structure to solve the above technical problems. Contents of the invention [0004] A series of concepts in simplified form are introduced in the Summary of the Invention, which will be further detailed in the Detailed De...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L23/28H01L21/56
CPCH01L21/56H01L23/28H01L23/31
Inventor 殷原梓
Owner SEMICON MFG INT (SHANGHAI) CORP
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