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AlN substrate-based efficient cooling HEMT device and preparation method thereof

A device and high-efficiency technology, applied in the field of high-efficiency heat dissipation HEMT devices and their preparation on AlN substrates, can solve problems that have not been reported before, and achieve the effects of improving heat dissipation capacity, reducing parasitic capacitance, and simple substrate transfer process

Active Publication Date: 2017-12-15
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In terms of application, the BCB adhesive heterogeneous bonding technology is fully compatible with the CMOS process of Si materials, and has both cost and efficiency advantages. However, there has not been any report on the bonding of ceramic substrates and III-V materials.

Method used

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  • AlN substrate-based efficient cooling HEMT device and preparation method thereof
  • AlN substrate-based efficient cooling HEMT device and preparation method thereof
  • AlN substrate-based efficient cooling HEMT device and preparation method thereof

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Embodiment Construction

[0035] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0036]It should be noted that, in the drawings or descriptions of the specification, similar or identical parts all use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values ​​may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values ​​within acceptable error margins or design constraints. The directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the direc...

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Abstract

The invention provides an AlN substrate-based efficient cooling HEMT device which includes, from bottom to top, an AlN ceramic substrate, an AlN nucleation layer, an AlN high-resistance layer, a GaN or In<x>Ga<1-x>N channel layer, an Al<y>In<1-y>N space charge layer, and an Al<z>Ga<1-z>N barrier layer. The AlN ceramic substrate and the AlN nucleation layer are bonded. The AlN ceramic substrate is used for cooling the HEMT device. The invention further provides a preparation method of the AlN substrate-based efficient cooling HEMT device. According to the HEMT device and the preparation method thereof, the cooling capability is greatly improved, the cost is relatively low, the process is simple, the breakdown voltage is improved, the parasitic capacitance is reduced, and the performance of the HEMT device is improved.

Description

technical field [0001] The disclosure belongs to the technical field of semiconductors, and in particular relates to an AlN substrate efficient heat dissipation HEMT device and a preparation method thereof. Background technique [0002] At present, the sapphire substrate is a common substrate for growing HEMTs, but the lattice constant and thermal expansion coefficient match between the sapphire substrate and the epitaxial layer (gallium nitride and aluminum nitride, etc.) is poor, and the thermal expansion of the sapphire substrate The conductivity is very low, which limits its application in the field of high-power electronic devices. [0003] The laser lift-off technology of sapphire substrate and GaN epitaxial layer has been very mature in the field of LED. Considering the high thermal conductivity and high band gap of AlN, fabricating HEMTs on sapphire / AlN substrates and then transferring them to high thermal conductivity substrates (such as AlN ceramic substrates) is ...

Claims

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Application Information

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IPC IPC(8): H01L23/373H01L21/335H01L29/66H01L29/778
CPCH01L29/778H01L23/3731H01L29/2003H01L29/66431
Inventor 汪连山吉泽生赵桂娟孟钰淋李方政杨少延王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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