Silicon carbide power device with buried n-type channel and manufacturing method thereof

Abstract

A silicon carbide power device with a buried N-type channel and its manufacturing method, by changing the structure in the channel, thereby improving the electric field distribution, protecting the device, preventing the device from overheating and premature breakdown in a high-voltage environment, and improving carbonization. The role of silicon power device stability and reliability. The silicon carbide power device with buried N-type channel includes: a back metal contact arranged at the bottom, a silicon carbide substrate arranged above the back metal contact, a silicon carbide epitaxial layer arranged above the silicon carbide substrate, The active injection region, the JTE injection region and the N-type buried channel arranged in the silicon carbide epitaxial layer, wherein the active injection region and the JTE injection region are symmetrically distributed along the center line of the device, and the JTE injection region is arranged on the active Outside the injection region, an N-type buried channel is arranged below the main junction of the active injection region, and the oxide passivation layer above the silicon carbide epitaxial layer is in contact with the surface metal.

Description

technical field [0001] The invention relates to a silicon carbide power device and a manufacturing method thereof, in particular to a silicon carbide power device with a buried N-type channel and a manufacturing method thereof. Background technique [0002] Silicon carbide (SiC) is a wide-bandgap semiconductor with excellent performance. It not only has the characteristics of wide bandgap, high thermal conductivity, high breakdown field strength, and high saturation electron drift rate, but also has excellent physical stability and chemical stability. Stability, strong radiation resistance and mechanical strength, etc. Therefore, SiC can be used to develop high-temperature, high-frequency, high-power power devices. [0003] In high-temperature, high-frequency, and high-power power devices, the stability and reliability of semiconductor power devices are very important indicators in the production assessment of semiconductors, and are also important factors that seriously aff...

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Problems solved by technology

[0005] Aiming at the problem of insufficient reliability of existing SiC power devices, the present invention improves the channel structure of the device by improving the buried process, thereby protecting the device, preventing the device from overheating and premature breakdown in a high-voltage environment, and improving the performance of silicon carbide. The role of power device reliability

[0006] The purpose of the present invention is to provide a silicon carbide power device with buried N-type channel and its manufacturing method to solve the problems of stability and reliability of silicon carbide power devices

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