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Cancellation circuit of electric memory effect of power amplifier

A technology of power amplifier and memory effect, which is applied to power amplifiers, high-frequency amplifiers, improved amplifiers to reduce noise effects, etc., and can solve the problems of complex circuit structure and high cost

Inactive Publication Date: 2017-12-15
杭州长泽科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the circuit structure using the above-mentioned elimination method is relatively complicated, and the cost is also high, so there is a certain degree of difficulty.

Method used

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  • Cancellation circuit of electric memory effect of power amplifier
  • Cancellation circuit of electric memory effect of power amplifier
  • Cancellation circuit of electric memory effect of power amplifier

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Embodiment Construction

[0016] In order to further illustrate the content of the present invention, the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0017] We use field effect transistor MGA-81563, its structure is as follows figure 1 As shown, the 1st, 2nd, 4th and 5th pins are connected to the source of the field effect transistor, the 3rd pin is the gate (ie the input terminal), and the 6th pin is the drain (ie the output terminal). as per figure 1 As shown, two inductors L1 and L2 with equal inductance values ​​are added to the source of the FET, that is, pins 1 and 2 and pins 4 and 5, respectively, and the gate and drain of the FET, that is, the third tube Add a capacitor C between the pin and the 6th pin. We know that the calculation formulas of inductance and capacitance impedance are:

[0018] Z L =jωL

[0019] Z C =1 / jωC

[0020] Among them, Z L and Z C Respectively, the impedance of the inductor and the capacit...

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Abstract

The invention mainly discloses a cancellation circuit of an electric memory effect of a power amplifier. The method is specifically characterized in that an inductor is added on a transmission electrode of a transistor (or a field-effect tube), a capacitor is added between a base electrode and a collector (or a grid electrode and a drain electrode) of the transistor (or the field-effect tube), wherein the added inductor imports positive voltage feedback, and the capacitor imports negative voltage feedback, so that the depth of the positive feedback or the negative feedback can be changed by adjusting the value of the inductor or the capacitor. When the inductor or the capacitor is a certain fixed value, the fluctuation range of the base electrode impedance of the transistor or the grid electrode impedance of the field-effect tube within the working frequency range is minimum, and at this time, the improvement effect of the electric memory effect of the power amplifier is optimal.

Description

technical field [0001] The invention relates to the technical field of improving a radio frequency power amplifier of a wireless communication system, in particular to a circuit for weakening the electrical memory effect of a radio frequency power amplifier. Background technique [0002] RF power amplifiers are an essential part of modern communication systems. When a high-power signal is input, the power amplifier is prone to nonlinear characteristics, so people often use various linearization techniques to increase its 1dB compression point to obtain better linear characteristics. However, the existence of the memory effect of the power amplifier affects the performance of the linearization technology. [0003] In general, memory effects are present in any power amplifier. A representation of the nonlinear characteristics of the power amplifier is the AM-AM, AM-PM characteristic curve. Usually, these characteristics of the power amplifier are unchanged when the narrowba...

Claims

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Application Information

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IPC IPC(8): H03F1/26H03F1/32H03F3/19H03F3/21
CPCH03F1/26H03F1/32H03F3/19H03F3/21
Inventor 许艳苇
Owner 杭州长泽科技有限公司
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