A method and device for eliminating the influence of temperature on the drift of the α-energy spectrum peak of a si-pin detector

A detector and energy spectrum technology, which is applied in the field of eliminating the influence of temperature on the drift of Si-PIN detector α-energy spectrum peaks, can solve problems such as test result deviation, achieve accuracy and reliability, reduce measurement result deviation, and realize energy The effect of peak following

CN107490585BActive Publication Date: 2018-07-31HENGYANG NORMAL UNIV +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2018-07-31

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Abstract

The invention discloses a method and a device for eliminating a drift influence of temperature on an alpha-energy spectrum peak of an Si-PIN detector, and relates to the technical field of radon concentration measurement. The method for eliminating the drift influence of the temperature on the alpha-energy spectrum peak comprises the four steps: signal amplification, following of energy spectrum peaks, signal amplitude identification and determination of radon concentration. According to the method and the device disclosed by the invention, temperature measured by a temperature and humidity sensor is used as a reference evidence of actual temperature of the detector, through combination of amplitudes of the energy spectrum peaks output by a peak holding circuit and an ADC (Analog-to-Digital Converter) conversion circuit acquisition detector, the actual temperature of the detector is accurately judged, so that the following of the energy spectrum peaks and elimination of the drift influence of the temperature on the alpha-energy spectrum peak of the Si-PIN detector are realized, deviation of a measurement result caused by difference of the temperature measured by the detector and the temperature and humidity sensor is reduced to a maximum extent, the accuracy and the reliability of the measurement result are ensured, and a continuous monitoring requirement on a nuclear facility site can be met.
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Description

technical field

[0001] The invention relates to the technical field of radon concentration measurement, in particular to a method and a device for eliminating the influence of temperature on the drift of the α energy spectrum peak of a Si-PIN detector. Background technique

[0002] Compared with other detectors, Si-PIN detector semiconductor detectors have the advantages of high energy resolution, fast time response, wide linear range, small size, and low operating voltage. The detector is a reverse-biased PN junction diode, which is equivalent to a solid ionization chamber. The working principle is similar to that of a gas ionization chamber, except that the gas in the gas detector is replaced by a semiconductor material. When charged particles enter the depletion region, electron-hole pairs are generated, which move to both sides under the action of the electric field in the sensitive region, and are collected by the electrode to form a pulse charge signal. The size of the...

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Embodiment Construction

[0037] In order to facilitate those skilled in the art to better understand the improvement of the present invention compared with the prior art, the present invention will be further described below in conjunction with the embodiments and accompanying drawings.

[0038] figure 2 A specific structure of the device for eliminating the influence of temperature on the peak drift of the Si-PIN detector α-energy spectrum according to the present invention is shown, which includes a preamplifier circuit, an amplification shaping circuit, a pulse amplitude discrimination circuit, a peak hold circuit, and an ADC A conversion circuit, a single-chip microcomputer, an automatic threshold value adjustment circuit, and a Si-PIN detector and a temperature and humidity sensor arranged in the measurement chamber; wherein, the model of the preferred single-chip microcomputer is STC15F2K60.

[0039] The Si-PIN detector, preamplifier circuit, amplification forming circuit, pulse amplitude discr...