A flexible water-oxygen barrier film with broadband anti-reflection effect and preparation method thereof
A technology of water-oxygen barrier film and barrier film, which is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problem of low water-oxygen barrier performance, difficulty in meeting the requirements of optoelectronic devices, and optical performance that cannot meet the requirements of flexibility and transparency Optoelectronic device use requirements and other issues, to achieve the effect of low cost, good bending performance, high efficiency
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[0034] Specifically, the preparation method comprises the following steps:
[0035] (1) Select the film material type and film deposition process of the flexible transparent substrate, the barrier film, so that the glass transition temperature of the flexible transparent substrate is higher than the working temperature of the film deposition process, and the film material of the barrier film is at least Two different materials are selected, and the refractive index of the flexible transparent substrate is between the highest refractive index and the lowest refractive index of the film materials selected for the barrier film.
[0036] Specifically, the selection principles of the flexible transparent substrate and the thin film deposition process include the following aspects: at least two different materials are selected for the barrier film material, and the refractive index of the substrate material should be within the range of the selected film material (that is, each layer...
Embodiment 1
[0053] Example 1 is to deposit silicon nitride / silicon oxide alternating structure by PECVD process on a transparent polyimide PI substrate with a glass transition temperature of 356 ° C. The steps adopted are as follows:
[0054] 1) Prepare a transparent polyimide PI film on a glass substrate with a thickness of 20 microns.
[0055] 2) According to the thermal properties such as the glass transition temperature and thermal expansion coefficient of the above-mentioned polyimide film, and the optical properties such as the refractive index and extinction coefficient of the selected film material, the PECVD process is selected for deposition.
[0056] Specifically, since the selected PI substrate has a glass transition temperature of 356°C, the selected film material is silicon nitride SiN x and silicon oxide SiO x (Since the atomic ratio of silicon nitride and silicon oxide deposited by different film deposition processes is not a fixed value, here silicon nitride SiN x and s...
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