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A kind of semiconductor device and its manufacturing method and electronic device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., to achieve high breakdown voltage, increase on-state current, and reduce on-resistance

Active Publication Date: 2020-06-09
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the question now is how to reduce the on-resistance as much as possible and maintain the source-drain breakdown voltage constant or even higher through reasonable design.

Method used

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  • A kind of semiconductor device and its manufacturing method and electronic device
  • A kind of semiconductor device and its manufacturing method and electronic device
  • A kind of semiconductor device and its manufacturing method and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] In view of the existence of the aforementioned problems, the present invention provides a new method for manufacturing a semiconductor device, such as image 3 As shown, it mainly includes the following steps:

[0050] Step S301, providing a semiconductor substrate, and forming a barrier layer on the surface of the semiconductor substrate;

[0051] Step S302, forming a first opening and a second opening in the barrier layer corresponding to the region where the local field oxide layer is to be formed, the first opening and the second opening exposing the surface of the semiconductor substrate;

[0052] Step S303, perform an oxidation process to form a first field oxide layer in the semiconductor substrate in the first opening, form a second field oxide layer in the semiconductor substrate in the second opening, and form a second field oxide layer in the semiconductor substrate in the second opening. A third field oxide layer is formed in the semiconductor substrate bel...

Embodiment 2

[0089] The present invention also provides a semiconductor device formed by the method in the first embodiment above, and the semiconductor device is an LDMOS.

[0090] Below, refer to Figure 2C The structure of the semiconductor device of the present invention will be described in detail.

[0091] As an example, the semiconductor device of the present invention includes: a semiconductor substrate 200 , and a drift region 204 having a first conductivity type formed in the semiconductor substrate 200 .

[0092] The semiconductor substrate 200 may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), germanium-on-insulator Silicon oxide (SiGeOI) and germanium on insulator (GeOI) and so on.

[0093] The doping concentration of the drift region is low, which is equivalent to forming a high-resistance layer between the source and the drain, which can increase the breakdown vo...

Embodiment 3

[0110] The present invention also provides an electronic device, including the semiconductor device described in Embodiment 2, and the semiconductor device is prepared according to the method described in Embodiment 1.

[0111] The electronic device of this embodiment can be any electronic device such as a mobile phone, a tablet computer, a notebook computer, a netbook, a game console, a TV set, a VCD, a DVD, a navigator, a digital photo frame, a camera, a video camera, a recording pen, MP3, MP4, PSP, etc. Product or equipment, but also any intermediate product including electrical circuits. The electronic device of the embodiment of the present invention has better performance due to the use of the above circuit.

[0112] in, Figure 4An example of a mobile phone handset is shown. The mobile phone handset 400 is provided with a display portion 402 included in a housing 401, operation buttons 403, an external connection port 404, a speaker 405, a microphone 406, and the like...

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Abstract

The invention provides a semiconductor device, a manufacturing method thereof, and an electronic device, and relates to the technical field of semiconductors. The method includes: providing a semiconductor substrate, forming a barrier layer on the surface of the semiconductor substrate; forming a first opening and a second opening in the barrier layer corresponding to a region where a local field oxide layer is scheduled to be formed, the first opening and the second opening Exposing the surface of the semiconductor substrate; performing an oxidation process to form a first field oxide layer in the semiconductor substrate in the first opening, forming a second field oxide layer in the semiconductor substrate in the second opening, and forming a second field oxide layer in the semiconductor substrate in the first opening A third field oxide layer is formed in the semiconductor substrate between the second opening and below the barrier layer, wherein the thickness of the third field oxide layer is smaller than the thicknesses of the first field oxide layer and the second field oxide layer; and the barrier layer is removed. According to the method of the invention, the thickness of the middle region of the formed field oxide layer is relatively thin, which improves the on-state current, reduces the on-resistance, and keeps the breakdown voltage of the device unchanged or even higher.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the rapid development of the semiconductor industry, power integrated circuits (Power Integrated Circuit, referred to as PIC) continue to be used in many fields, such as motor control, flat panel display drive control, drive control of computer peripherals, etc. The semiconductor field effect LDMOSFET (lateral double-diffused MOSFET, referred to as LDMOS) has the characteristics of high operating voltage, simple process, and easy compatibility with CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) circuits, and is widely used as a power device. used in power integrated circuits. [0003] The source-drain breakdown voltage (BVdss) and on-resistance (Ron) characteristics of power devices are critical to the design...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/762H01L21/336H01L29/78
CPCH01L29/66681H01L29/7816H01L21/76205H01L21/76221H01L29/42368H01L29/402
Inventor 陈德艳郑大燮
Owner SEMICON MFG INT (SHANGHAI) CORP
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