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A self-aligned gan Schottky diode and its manufacturing method

A technology for Schottky diodes and manufacturing methods, which is applied in the fields of diodes, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of low plane process compatibility, current crowding, and complicated manufacturing processes, and achieves strong manufacturability, high The effect of shortened pitch and low process complexity

Active Publication Date: 2022-07-22
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation process of this scheme is relatively complicated, and the compatibility with the current planar process is low.
[0006] Chinese patent application 201710370209.0 discloses "a preparation method of a GaN-based Schottky diode with a quasi-vertical structure", which provides a preparation method for a GaN-based Schottky diode with a quasi-vertical structure, which can reduce the series resistance of the device and improve the working Frequency, to solve the problem of current congestion
However, this scheme is a quasi-vertical structure diode fabrication method, which is less compatible with the current planar process.

Method used

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  • A self-aligned gan Schottky diode and its manufacturing method
  • A self-aligned gan Schottky diode and its manufacturing method
  • A self-aligned gan Schottky diode and its manufacturing method

Examples

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Embodiment 1

[0044] Example 1: Preparation The SiC substrate 1 is used, the width of the spacer 6 is 150 nm, the metal of the T-type anode 4 is Ni / Pt / Au, and the doping concentration of the n-GaN layer 3 is 2E17 / cm 3 , the doping concentration of n+GaN layer 2 is 5E19 / cm 3 Specifications of a self-aligned GaN Schottky diode whose fabrication process is:

[0045] 1) On the SiC substrate 1, use the metal organic chemical vapor deposition technology MOCVD to grow a 1 μm thick n+GaN layer 2 at 950 ° C, the doping source is Si, and the doping concentration is 5E19 / cm 3 , and then grow a 1 μm thick n-GaN layer 3, the doping source is Si, and the doping concentration is 2E17 / cm 3 .

[0046] 2) The anode pattern is photoetched on the top of the n-GaN layer 3, and then the anode metal is evaporated to form a T-type anode 4; It is 30nm, 50nm and 600nm; the process conditions of electron beam evaporation are: vacuum degree≤2.0×10 -6 Torr, the deposition rate is less than

[0047] 3) Using the ...

Embodiment 2

[0053] Example 2: Preparation The Si substrate 1 is used, the width of the spacer 6 is 20 nm, the metal of the T-type anode 4 is W / Ti / Au, and the doping concentration of the n-GaN layer 3 is 5E17 / cm 3 , the doping concentration of n+GaN layer 2 is 4E20 / cm 3 Specifications of a self-aligned GaN Schottky diode whose fabrication process is:

[0054] 1) On the SiC substrate 1, use the metal organic chemical vapor deposition technology MOCVD to grow a 2 μm thick n+GaN layer 2 at 950 ° C, the doping source is Ge, and the doping concentration is 4E20 / cm 3 , and then grow a 300nm thick n-GaN layer 3, the doping source is Ge, and the doping concentration is 5E17 / cm 3 .

[0055] 2) The anode pattern is photoetched on the top of the n-GaN layer 3, and then the anode metal is sputtered to form a T-type anode 4; It is 20nm, 20nm and 700nm; the process conditions of magnetron sputtering are: vacuum degree≤3×10 -6 Torr, the deposition rate is less than

[0056] 3) Step 3) of Example 2...

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Abstract

The invention relates to a self-aligned GaN Schottky diode and a manufacturing method thereof, belonging to the technical field of semiconductor device preparation. The diode includes a substrate, an n+GaN layer, an n-GaN layer, a T-type anode and an air bridge; an isolation trench is arranged above the substrate, a cathode is arranged above the n+GaN layer, and the n-GaN layer is A spacer is also arranged between the cathode and the T-type anode, and the T-type anode is located directly above the n-GaN layer, and the n-GaN layer and the T-type anode have the same diameter. The self-aligned GaN Schottky diode proposed by the present invention can greatly shorten the distance between the cathode and the anode, reduce the series resistance of the n+GaN layer, and improve the cut-off frequency and power performance of the diode. The structural Schottky diode has high compatibility and has broad application prospects in the fields of microwave and millimeter-wave rectifiers, limiters, and terahertz frequency multipliers.

Description

technical field [0001] The invention relates to a self-aligned GaN Schottky diode and a manufacturing method thereof, belonging to the technical field of semiconductor device preparation. [0002] technical background [0003] Compared with Si, GaAs, InP and other materials, the wide band gap characteristics of the third-generation semiconductor GaN materials make GaN Schottky diodes have great advantages of high breakdown and high power. Therefore, Schottky diodes based on GaN semiconductors are expected to overcome the shortage of output power or withstand power of traditional semiconductor diodes, and have broad prospects in high-power rectifiers, limiters and frequency multipliers. [0004] Similar to GaAs Schottky diodes, due to the simple fabrication process and high compatibility, GaN Schottky diodes are usually planar structures, that is, the anode and the cathode are located on the same plane, and there is a certain distance between the cathode and the anode, general...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/417H01L29/47H01L29/872H01L21/28H01L21/329
CPCH01L29/872H01L29/66212H01L29/401H01L29/417H01L29/475
Inventor 张凯代鲲鹏陈韬牛斌朱广润陈堂胜
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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