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A kind of semiconductor device and its manufacturing method

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as performance mismatch, occupation, etc., to improve performance and yield, improve filling performance, and improve mismatch characteristics. Effect

Active Publication Date: 2020-02-11
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For SRAM devices, the performance mismatch between the pull-down transistor PD and the pull-up transistor PG occupies a dominant position in the SRAM yield rate.
For PMOS devices, the gap filling ability of the metal gate material is also greatly challenged.

Method used

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  • A kind of semiconductor device and its manufacturing method
  • A kind of semiconductor device and its manufacturing method
  • A kind of semiconductor device and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] In order to solve the problems in the prior art, the invention provides a method for manufacturing a semiconductor device, such as figure 2 As shown, it includes the following main steps:

[0043] In step S201, a semiconductor substrate having a first device type region and a second device type region is provided, and first a dummy gate structure and a second dummy gate structure;

[0044] In step S202, removing the first dummy gate structure and the second dummy gate structure to respectively form a first gate trench and a second gate trench;

[0045] In step S203, forming a high-k dielectric layer on the bottom and sidewalls of the first gate trench and the second gate trench;

[0046]In step S204, filling the second gate trench with a sacrificial material layer;

[0047] In step S205, a first work function layer is formed on the bottom and sidewalls of the first gate trench, and a first metal gate layer is filled in the first gate trench;

[0048] In step S206, ...

Embodiment 2

[0092] The present invention also provides a semiconductor device manufactured by a method of the embodiment. refer to Figure 1D , the semiconductor device of the present invention comprises:

[0093] A semiconductor substrate 100 having a region of a first device type and a region of a second device type.

[0094] Wherein, the first device type region is a PMOS region, and the second device type region is an NMOS region, or, the first region is an NMOS region, and the second region is a PMOS region. Hereinafter, the semiconductor device of the present invention will be described mainly in the case that the region of the first device type is a PMOS region, and the region of the second device type is an NMOS region.

[0095] The constituent materials of the semiconductor substrate 100 can be undoped single crystal silicon, single crystal silicon doped with impurities, silicon on insulator (SOI), silicon on insulator (SSOI), silicon germanium on insulator (S- SiGeOI), silico...

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Abstract

The invention provides a semiconductor device and a manufacture method for the same, relating to the semiconductor technology field. The manufacture method for the semiconductor device comprises stepsof providing a semiconductor substrate, forming a first gate groove and a second gate groove in semiconductor substrates of a first type area and a second type area, forming a high k dielectric layeron bottoms and side walls of the first gate groove and the second gate groove, filling the second gate groove with a sacrifice material layer, forming a first work function layer on the bottom and the side walls of the first gate groove, filling the first gate groove with a first metal gate layer, completely removing the sacrifice material layer, successively forming a second work function and afirst blocking layer in the second gate groove and filling the second gate groove with a secibd metal gate layer, wherein the first metal gate layer and the second metal gate layer are made of different metal materials. The semiconductor device and the manufacture method for the same can improve filling performance of the metal gate in the PMOS region, can improve mismatching of NMOS and improvesthe performance and a yield rate of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In the manufacturing process of next-generation integrated circuits, a high-k-metal gate process is usually used for the fabrication of metal oxide semiconductor (MOS) gates. [0003] Whether it is metal gate first or metal gate last, aluminum diffusion has always been one of the main issues affecting device reliability and performance, such as time-dependent dielectric breakdown (Time Dependent Dielectric Breakdown, referred to as TDDB), negative bias temperature Instability (Negative Bias Temperature Instability, referred to as NBTI), positive bias temperature instability (Positive Bias Temperature Instability, referred to as PBTI) and other reliability have a negative impact, while aluminum diffusion will also affect the mobility of carriers, reducing device performance. In order ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8238H01L21/336H01L21/28
Inventor 李勇
Owner SEMICON MFG INT (SHANGHAI) CORP