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Block polymers and random polymers that can be used for directional self-assembly and their preparation methods and self-assembly methods

A technology of block polymers and block copolymers, which is applied in the field of block polymers and random polymers and their preparation, and can solve the problems of low DSA annealing efficiency

Active Publication Date: 2021-03-09
KEMPUR MICROELECTRONICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the technical problem of low DSA annealing efficiency in the prior art, the present invention provides a block polymer that can be used for directed self-assembly, and the block polymer can rapidly undergo phase separation, thereby improving production efficiency

Method used

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  • Block polymers and random polymers that can be used for directional self-assembly and their preparation methods and self-assembly methods
  • Block polymers and random polymers that can be used for directional self-assembly and their preparation methods and self-assembly methods
  • Block polymers and random polymers that can be used for directional self-assembly and their preparation methods and self-assembly methods

Examples

Experimental program
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Embodiment 1

[0076] Under anhydrous and oxygen-free conditions, 250 mL of tetrahydrofuran (THF) that had been dehydrated and deoxygenated was added to the reaction flask, and the temperature of the reaction flask was lowered to -78° C. after three freeze-thaw cycles. Under the protection of dry helium, after adding 0.01mL of 2.5M n-butyllithium cyclohexane solution, 1.97g of p-tert-butoxystyrene (tBOS) was added, and after one hour of reaction, 0.01mL of diphenylethylene ( DPE) was reacted for half an hour, after all active reaction ends were connected with DPE, 1.23 g of n-butyl methacrylate (nBMA) was added, and the reaction was continued for one hour. After the reaction was completed, 4 mL of methanol that had undergone three freeze-thaw cycles was added to the reaction bottle to terminate the reaction. Add the reaction product dropwise to the methanol solution, suction filter and wash the precipitate several times, such as three times, and then vacuum dry at room temperature to obtain ...

Embodiment 2

[0081] Under anhydrous and oxygen-free conditions, 250 mL of tetrahydrofuran (THF) that had been dehydrated and deoxygenated was added to the reaction flask, and the temperature of the reaction flask was lowered to -78° C. after three freeze-thaw cycles. Under the protection of dry helium, add 0.02mL of 2.5M n-butyllithium cyclohexane solution, add 4.80g of tert-butylstyrene (tBS), react for one hour, add 0.06mL of diphenylethylene (DPE) After half an hour of reaction, 3.84 g of n-propyl methacrylate (nPMA) was added after all active reaction ends were connected with DPE, and the reaction was continued for one hour. After the reaction was completed, 4 mL of methanol that had undergone three freeze-thaw cycles was added to the reaction bottle to terminate the reaction. Add the reaction product dropwise to the methanol solution, suction filter and wash the precipitate several times, such as three times, and vacuum dry at room temperature to obtain the block polymer BCP with a mo...

Embodiment 3

[0086] Under anhydrous and oxygen-free conditions, 250 mL of tetrahydrofuran (THF) that had been dehydrated and deoxygenated was added to the reaction flask, and the temperature of the reaction flask was lowered to -78° C. after three freeze-thaw cycles. Under the protection of dry helium, after adding 0.017mL of 2.5M n-butyllithium cyclohexane solution, 1.38g of trifluoromethylstyrene (TFMS) was added, and after one hour of reaction, 0.06mL of diphenylethylene (DPE ) to react for half an hour, after all active reaction ends were connected with DPE, 2.02 g of trifluoroethyl methacrylate (TFEMA) was added, and the reaction was continued for one hour. After the reaction was completed, 4 mL of methanol that had undergone three freeze-thaw cycles was added to the reaction bottle to terminate the reaction. Add the reaction product dropwise to the methanol solution, suction filter and wash the precipitate several times, such as three times, and vacuum dry at room temperature to obta...

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Abstract

The invention relates to polymer compound synthesis and an application, and concretely relates to block polymers and random polymers which both can be used for directed self-assembly and preparation methods and a self-assembly method of the block polymers and the random polymers. The block polymers are obtained by anionic polymerization, and compatibility does not exist among blocks; and the random polymers are obtained by free radical polymerization of monomers of the block polymers and epoxy methacrylate monomers, and the random polymers relative to blocks of the above block polymers are neutral. According to the block polymers provided by the invention, after the block polymers coat a cross-linked random polymer neutral layer, a phase separation structure perpendicular to a substrate can be formed without annealing heat treatment, and the production efficiency is improved; a pattern with a size range of 20-100nm can be formed, and the size range of the formed pattern is enlarged; and meanwhile, the block polymers and the random polymers provided by the invention are applied to transfer of patterns in the microelectronic field, and the process requirements and the production costs are reduced.

Description

technical field [0001] The invention belongs to the synthesis and application of macromolecule compounds, in particular, the invention relates to block polymers and random polymers that can be used for directional self-assembly and their preparation methods and self-assembly methods. Background technique [0002] In the modern semiconductor industry, the cost and performance of integrated circuits are closely related to the critical dimensions they can achieve. In order to obtain the pattern of the nanoscale critical dimension, the traditional method of using photolithography is widely used. In the traditional photolithography process, ultraviolet rays (UV) are irradiated onto the substrate coated with photoresist after passing through the mask, so that a chemical reaction occurs inside the photoresist and the solubility of the exposed area in the developer solution changes, thereby obtaining The corresponding pattern is then transferred to the substrate by etching, metal d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08F297/02C08F212/36C08F220/24C08F220/32C08F220/18G03F7/00
Inventor 李海波李冰马克·奈舍刘德军
Owner KEMPUR MICROELECTRONICS