Si-doped InAs/GaAs quantum dot laser and preparation method thereof
A quantum dot and laser technology, which is applied in the field of Si-doped InAs/GaAs quantum dot laser and its preparation, can solve the problems of size, shape distribution uniformity and difficult control of density, and achieve the effect of reducing threshold current and improving device performance.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0090] (1) Take a substrate 10, which is an n+ type GaAs substrate with a crystal orientation of (100), a doping element of Si, and a doping concentration of (0.5-5)×10 18 cm -3 ;
[0091] (2) Epitaxially grow a layer of GaAs buffer layer 20 on the above-mentioned GaAs substrate 10, the buffer layer growth thickness is 0-800nm, it is n-type doped, the doping element is Si element, and the doping concentration is (0.5- 5)×10 18 cm -3 ;
[0092] (3) Epitaxially grow the AlGaAs lower cladding layer 30 on the above-mentioned GaAs buffer layer 20, the growth thickness is 500-2000nm, and perform n-type doping on it, the doping element is Si element, and the doping concentration is (0.1-5)× 10 18 cm -3 ;
[0093] (4) epitaxially growing the GaAs lower waveguide layer 40 on the above-mentioned AlGaAs lower cladding layer 30, with a growth thickness of 50-200 nm;
[0094] (5) Epitaxially grow a Si-doped InAs quantum dot layer 51 on the above-mentioned GaAs lower waveguide layer...
PUM
Property | Measurement | Unit |
---|---|---|
Doping concentration | aaaaa | aaaaa |
Growth thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com