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Indium electroplating compositions containing 2-imidazolidinethione compounds and methods for electroplating indium

A technology of imidazolidinethione and composition, which is applied in the field of indium electroplating composition, can solve problems such as insufficient performance TIM, and achieve the effect of reducing damage

Inactive Publication Date: 2018-01-26
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the aforementioned TIMs have been sufficient for many semiconductor devices, the performance increase of semiconductor devices has made such TIMs insufficient

Method used

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  • Indium electroplating compositions containing 2-imidazolidinethione compounds and methods for electroplating indium
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  • Indium electroplating compositions containing 2-imidazolidinethione compounds and methods for electroplating indium

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0056] Example 1 (comparison)

[0057] Photoresist patterned silicon wafers from Silicon Valley Microelectronics, Inc. used NIKAL from Dow Advanced Materials TM The BP nickel electroplating bath electroplated with a nickel layer, the silicon wafer had a plurality of 75 μm diameter through holes and a copper seed layer at the base of each through hole. Nickel plating was performed at 55°C for 120 seconds at a cathodic current density of 1 ASD. Conventional rectifiers supply current. The anode is a soluble nickel electrode. After plating, the silicon wafer was removed from the plating bath using a SHIPLEY BPR from Dow Advanced Materials TM The photo stripper strips the photoresist from the wafer and rinses with water. The nickel deposits appeared substantially smooth and without any observable dendritic crystals on the surface. Figure 1A For use with LEICA TM Optical image of one of the nickel-coated copper seed layers taken by an optical microscope.

[0058] The followin...

example 2

[0064] The method described in Example 1 above was repeated, except that the indium electroplating composition included the following components:

[0065] Table 2

[0066] component

quantity

Indium sulfate

45g / L

citric acid

96g / L

Sodium Citrate Dihydrate

59g / L

1-(2-Hydroxyethyl)-2-imidazolidinethione

0.25g / L

[0067] The nickel-plated silicon wafer is immersed in the indium electroplating composition and the indium metal is electroplated on the nickel. Indium plating was performed at 25°C for 30 seconds at a current density of 4 ASD. The pH of the composition was 2.4. The anode is an indium soluble electrode. After electroplating indium on the nickel layer, the photoresist was stripped from the wafer and the indium morphology was observed. All indium deposits appeared uniform and smooth.

[0068] figure 2 An optical microscope image of one of the indium metal deposits electroplated on the nickel layer. compa...

example 3

[0070] The method described in Example 1 above was repeated, except that the silicon wafer was patterned with photoresist to have rectangular vias 50 μm in length and the indium electroplating composition included the following components:

[0071] table 3

[0072]

[0073]

[0074] The nickel-plated silicon wafer is immersed in the indium electroplating composition and the indium metal is electroplated on the nickel. Indium plating was performed at 25°C for 30 seconds at a current density of 4 ASD. The pH of the composition was 2.4. After electroplating the indium on the nickel, the photoresist was stripped from the wafer and the indium morphology was observed. All indium deposits appeared uniform and smooth.

[0075] image 3 An optical microscope image of one of the indium metal deposits electroplated on the nickel layer. compared to Figure 1B The indium deposits appear smooth.

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Abstract

Indium electroplating compositions containing 2-imidazolidinethione compounds electroplate substantially defect-free uniform layers which have a smooth surface morphology on metal layers. The indium electroplating compositions can be used to electroplate indium metal on metal layers of various substrates such as semiconductor wafers and as thermal interface materials.

Description

technical field [0001] The present invention relates to indium electroplating compositions containing 2-imidazolidinethione compounds and methods for electroplating indium metal onto metal layers. More particularly, the present invention relates to indium electroplating compositions containing 2-imidazolidinethione compounds and methods of electroplating indium metal onto metal layers, wherein the indium metal deposit is uniform, substantially void-free, and has a smooth surface form. Background technique [0002] The ability to reproducibly deposit void-free uniform indium on metal layers with target thickness and smooth surface morphology is challenging. Indium reduction occurs at a more negative potential than that for proton reduction, and significant hydrogen bubbling at the cathode causes an increase in surface roughness. Indium (1) stabilized due to inert pair effect formed in an indium deposition process + ) ions catalyze the reduction of protons and participate i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/54
CPCC25D3/54C25D7/12C25D7/123
Inventor Y·秦K·弗拉伊斯里克M·列斐伏尔
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC