Two-dimensional material photoelectric detector capable of enhancing visible and near-infrared band light absorption
A photodetector and two-dimensional material technology, applied in the field of photodetectors, can solve the problems of low optical responsivity and low light absorption, and achieve the effects of stable electrical performance, gain optical responsivity, and avoid the influence of electrical performance.
Active Publication Date: 2018-01-26
BEIJING UNIV OF TECH
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[0006] Aiming at the difficulties and deficiencies of the existing two-dimensional materials such as intrinsic graphene with low light absorption and low photoresponsivity of photodetectors of intrinsic two-dimensional materials, the present invention provides a dual dimensional material photodetector
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Embodiment 1
[0022] Such as figure 1 The shown two-dimensional material photodetector that enhances light absorption in the visible and near-infrared bands includes a substrate (1) made of silicon, vapor-deposited silicon oxide with a thickness of 300 nm and an etching depth of 110 nm, a period of 416 nm, and a grating width of 208nm, the width of the grating area is 50μm, the grating length is greater than 150μm (2), 5nm Ti and 15nm Au are evaporated on the surface of the grating structure (3), 150μm×150μm chemical vapor deposition grown graphene by point transfer Plane layer (4), 10nm thick Ti, 80nm thick Au metal electrode (5) deposited by electron beam evaporation.
[0023] The graphene of this embodiment is to obtain the graphene of single crystal by the method for chemical vapor deposition and determine thickness with optical microscope and atomic force microscope, transfer graphene to the blank silicon wafer by the method of wet transfer again, and utilize photolithography positive ...
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The invention provides a two-dimensional material photoelectric detector capable of enhancing visible and near-infrared band light absorption and belongs to the field of a photoelectric detector. Thephotoelectric detector comprises a P-type silicon substrate; a silicon oxide grating, the surface of which has titanium and gold layers; a single-layer two-dimensional material; and metal electrodes at the two sides. The substrate is a high-doped P-type silicon substrate; the silicon oxide grating, the surface of which has the metal layers, is a metamaterial in a sub-wavelength structure; the single-layer two-dimensional material is formed through a fixed-point transfer process; and under the function of lighting, localized surface plasmons are formed on the surfaces of the metal layers. Localized surface plasmon resonance can be caused on visible and near-infrared bands; the two-dimensional material can fully absorb gain energy due to electric-field enhancement caused by localized surfaceplasmon resonance; and the electrodes are connected with an external DC power supply and can provide bias voltage between the source electrode and the drain electrode to enable the gain electrons toform light current, thereby generating light response and realizing function of photoelectric detection.
Description
technical field [0001] The invention belongs to the field of photodetectors, in particular to a two-dimensional material photodetector that enhances light absorption in visible light and near-infrared bands. Background technique [0002] Two-dimensional materials were proposed with the discovery of graphene, which is an isotope of carbon and is the thinnest material found so far, with a thickness of only 0.34nm. is the carbon atom with SP 2 Hexagonal two-dimensional monoatomic layer crystal structure formed by orbital hybridization. In 2004, Andre Geim and Konstantin Novoselov, two scientists from the University of Manchester in the United Kingdom, first prepared a single-layer graphene structure by mechanical exfoliation. Oxene has super strong mechanical properties, ultra-fast electron mobility, and good electrical conductivity, which has attracted extensive attention and research in the academic community. Afterwards, two-dimensional materials such as transition metal ...
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IPC IPC(8): H01L31/0232H01L31/028H01L31/0392H01L31/09
Inventor 张永哲李景峰严辉刘北云游聪娅庞玮王光耀杨炎翰申高亮邓文杰陈永锋
Owner BEIJING UNIV OF TECH