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Method of preparing for re-operation of reactor for growing epitaxial wafer

A wafer and reaction chamber technology, applied in the field of heavy operation preparation process, can solve problems such as difficulty in ensuring the quality of epitaxial wafers, and achieve the effect of reducing preparation time and improving productivity

Inactive Publication Date: 2018-01-26
LG SILTRON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in this method, the hydrogen may flow in the chamber not in the vertical direction but in the horizontal direction
Therefore, residual moisture or metal contamination may still be present in the lower part of the chamber
Here, the quality of epitaxial wafers produced under the above conditions may be difficult to guarantee

Method used

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  • Method of preparing for re-operation of reactor for growing epitaxial wafer
  • Method of preparing for re-operation of reactor for growing epitaxial wafer
  • Method of preparing for re-operation of reactor for growing epitaxial wafer

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Embodiment Construction

[0021] Although the embodiments have been described in detail with reference to the drawings, the present disclosure is not limited to the embodiments. Also, detailed descriptions related to known functions or configurations will be omitted to avoid unnecessarily obscuring the subject matter of the present disclosure.

[0022] Embodiments provide a method in which process conditions and pedestal positions in an epitaxial reactor (reactor) are changed such that stagnant contaminants in the lower part of the epitaxial reactor move upwards, creating an upflow.

[0023] figure 1 is a view of the epitaxial growth device, that is, a schematic cross-sectional view showing the first position of the susceptor when the baking process is performed in the processing chamber.

[0024] refer to figure 1 , the epitaxial growth apparatus 100 may include: an upper liner 105, a lower liner 102, an upper cover 106, a lower cover 101, a base 107, a preheating ring 108, a base support 109, an ai...

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Abstract

As a preparation stage for re-operating a reaction chamber in which epitaxial growth is performed for a wafer, an embodiment includes the steps of: maintaining a susceptor, provided inside the reaction chamber and having the wafer seated thereon, in a preset first position, and setting the flowrate of hydrogen gas introduced from a main valve to be greater than the flowrate of hydrogen gas introduced from a slit valve; moving the susceptor to a preset second position; and setting the quantity of hydrogen gas introduced from the main valve to be less than the quantity of hydrogen gas introducedfrom the slit valve while the susceptor is maintained in the second position. Accordingly, stagnant moisture and contaminants in the lower portion of the reaction chamber can be easily discharged toward a discharge port by means of the flow of hydrogen gas.

Description

technical field [0001] The present disclosure relates to a re-operation preparation process in a chamber, and more particularly, to a re-operation preparation method for forming an environment in which moisture and impurities remaining in the chamber are removed after epitaxial wafer growth is completed to perform subsequent Epitaxy process. Background technique [0002] Conventional silicon wafers can be manufactured through the following processes: a single crystal growth process, a slicing process, a grinding process, a packaging process, a polishing process, and a cleaning process for removing abrasives or foreign matter attached to the wafer after wafer polishing. Such a wafer manufactured by the above process may be referred to as a polished wafer, and a wafer manufactured by growing another single crystal layer (epitaxial layer) on the polished wafer may be referred to as an epitaxial wafer. [0003] Epitaxial wafers can have the following characteristics: fewer defe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCC23C16/4401H01L21/6719C30B25/14C30B25/12C23C16/4405C30B25/08
Inventor 赵万起姜东昊
Owner LG SILTRON
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