Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memristor having neural bionic function and preparation method and application thereof

A bionic function and memristor technology, which is applied to the field of memristor with neuron bionic function and its preparation, can solve the problems of small resistance change, high operating voltage, large power consumption, etc., and achieves large resistance change and operating voltage. The effect of low, low power consumption

Active Publication Date: 2018-02-09
HEBEI UNIVERSITY
View PDF7 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a memristor with neurobionic function and its preparation method and application, so as to solve the common problems of small resistance change, high operating voltage and large power consumption in existing memristors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memristor having neural bionic function and preparation method and application thereof
  • Memristor having neural bionic function and preparation method and application thereof
  • Memristor having neural bionic function and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Such as figure 1 As shown, the memristor with neurobionic function provided by the present invention, its structure includes Pt / Ti / SiO 2 / Si substrate 1, in Pt / Ti / SiO 2 The Ag bottom electrode layer 2 formed on the Pt film layer of the Si substrate 1, the functional layer 3 formed on the Ag bottom electrode layer 2, and the Ag top electrode layer 4 formed on the functional layer 3. The functional layer 3 includes a first zirconium hafnium oxide film layer 31 , a graphene oxide quantum dot intermediate layer 32 and a second zirconium hafnium oxide film layer 33 from bottom to top. Among them, Pt / Ti / SiO 2 / The bottom of Si substrate 1 is the Si film layer, and the Si film layer is SiO 2 film, SiO 2 The Ti film layer is on the film layer, and the Pt film layer is on the Ti film layer. Therefore, the Pt film layer is Pt / Ti / SiO 2 / the topmost layer of the Si substrate 1 .

[0037] The thickness of the functional layer 3 is 10-20nm, wherein the thickness of the graphen...

Embodiment 2

[0048] (1) Pt / Ti / SiO 2 / Si substrate 1 is placed in a beaker filled with acetone, cleaned by ultrasonic waves for 10 minutes, then placed in a beaker filled with alcohol and cleaned by ultrasonic waves for 10 minutes, then taken out with clips and placed in a beaker filled with deionized water for ultrasonic cleaning 5min, then take it out and use nitrogen (N 2 ) and blow dry.

[0049] (2) using such as figure 2 For the magnetron sputtering equipment shown, open the cavity 4, take out the table 7, first polish it with sandpaper until it shines, clean the organic matter attached to the surface of the table with acetone, and finally wipe it clean with alcohol; put the cleaned Pt / Ti / SiO 2 / Si substrate 1 is placed on the table 7 for tableting, and the Pt / Ti / SiO is ensured during tableting 2 / Si substrate 1 is firmly pressed on the tablet press table 7 and flattened to ensure uniform film growth during sputtering. After the tablet press is completed, it is placed on the subst...

Embodiment 3

[0055] Embodiment 3 Performance testing of memristor

[0056] (1) The synapse simulation function of the device prepared in Example 2 was tested, and the results are shown in image 3 with Figure 4 shown. in image 3 It is a graph obtained by continuously applying 15 circles of 0.7v, 50ns pulse width square wave to the device. It can be seen from the graph that as the number of pulses increases, the current of the device increases gradually, and the resistance value decreases continuously. Figure 4 It is a picture obtained by continuously applying 15 circles of -0.7v, 50ns pulse width square wave to the device. It can be seen from the figure that as the number of pulses increases, the current of the device decreases gradually, and the resistance value increases continuously. pass image 3 with Figure 4 , indicating that the resistance of the memristive device is adjustable and has a good neurobiological effect.

[0057] (2) Paired pulse facilitation (PPF) in biologic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a memristor having a neural bionic function. The structure of the memristor comprises a substrate, an Ag bottom electrode layer formed on the substrate, a functional layer formed on the Ag bottom electrode layer and an Ag top electrode layer formed on the functional layer, wherein the substrate, the Ag bottom electrode layer, the functional layer and the Ag top electrode layer are arranged from the bottom to the top in turn. The functional layer comprises a first zirconium hafnium oxide film layer, a graphene oxide quantum dot intermediate layer and a second zirconium hafnium oxide film layer which are arranged from the bottom to the top in turn. Meanwhile, the invention also discloses a preparation method and application of the memristor. The finally prepared memristor is enabled to have great neural bionic effect through the design of the specific structure, especially the graphene oxide quantum dot intermediate layer is arranged between the first zirconium hafnium oxide film layer and the second zirconium hafnium oxide film layer in the functional layer so that growth and fracture of the conductive filament can be accurately controlled to enhance the uniformity of the device, and the device is enabled to have the more stable resistance change, lower power consumption and better stability and uniformity in comparison with the similar devices.

Description

technical field [0001] The invention relates to a memristor and its preparation method and application, in particular to a memristor with neurobionic function, its preparation method and application. Background technique [0002] Memristors are another new passive circuit element after resistors, capacitors, and inductors. Simply put, a memristor is a non-linear resistor with a memory function. It is a two-terminal device and belongs to a typical sandwich structure based on the apex electrode-dielectric layer-bottom electrode, so it can be integrated at high density. Its working principle mainly uses the reversible transition phenomenon between the high and low resistance states of the intermediate dielectric layer under the action of different electric excitations to store data, that is, to change its resistance value by controlling the change of current, if the high resistance value Defined as "1" and low resistance value as "0", then this kind of resistance can realize t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/011H10N70/8833
Inventor 闫小兵张磊王静娟李小燕
Owner HEBEI UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com