LED chip and production method thereof

A technology of LED chips and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency, external quantum efficiency, and large leakage current, and achieve the goals of avoiding multiple reflections, reducing losses, and improving stability Effect

Active Publication Date: 2018-02-13
XIAMEN CHANGELIGHT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing HV LED chips, there are problems of large leakage current, low luminous efficiency and low external quantum efficiency

Method used

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  • LED chip and production method thereof
  • LED chip and production method thereof
  • LED chip and production method thereof

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Embodiment Construction

[0045] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0046] Generally, the structure of HV LED chip is as follows Figure 1a as shown, Figure 1a is a schematic structural diagram of a HV LED chip, Figure 1a The shown HV LED chip is provided with an epitaxial structure 12 on a substrate 11 . In the first direction Z, the epitaxial structure 12 includes an N-type semiconductor layer, a quantum well light-emitting layer and a P-type semiconductor layer arranged in sequence. In the second direction X, the epitaxia...

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Abstract

The invention discloses an LED chip and a production method thereof. The LED chip comprises a substrate and an extension structure arranged on the substrate, wherein the extension structure is dividedinto a plurality of LED primitive cells; peripheral side walls of the extension structure are provided with a side wall groove, and the side wall groove is used for reducing the total emission of thelight in the LED primitive cells; a primitive cell groove is formed between two adjacent LED primitive cells, the substrate is exposed by virtue of the bottom of the primitive cell groove, and the primitive cell groove reduces the total emission of the light in the LED primitive cells as well as the leak current; an insulation layer is arranged in the primitive cell groove; and a connection electrode covers the insulation layer, and the connection electrode electrically connects two adjacent LED primitive cells. In the technical scheme of the invention, the total emission of the light in theLED primitive cells is reduced by virtue of the side wall groove, the total emission of the light in the LED primitive cells and the leak current can be reduced by virtue of the primitive cell groove,so that the light emitting efficiency can be improved, the current leakage rate is reduced, and the external quantum efficiency can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, and more specifically, relates to an LED chip and a manufacturing method thereof. Background technique [0002] The light-emitting principle of light-emitting diodes (LEDs) is to use the energy difference between electrons moving between N-type semiconductors and P-type semiconductors to release energy in the form of light. This light-emitting principle is different from the light-emitting principle of incandescent lamps, so light-emitting diodes are used called a cold light source. Due to the advantages of high durability, long life, light weight, and low power consumption, light-emitting diodes are used in many fields such as signal indicators, lighting devices, and display devices. [0003] In order to reduce the cost of LED packaging applications, in recent years, HV LED chips (high voltage LED chips) have emerged as the times require, especially in the field of bulb lamps, bec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/24H01L33/36
Inventor 刘英策刘兆宋彬李俊贤吴奇隆
Owner XIAMEN CHANGELIGHT CO LTD
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