Highly efficient and easy-to-use field-effect transistor (FET)

Abstract

The invention discloses a highly efficient and easy-to-use field-effect transistor (FET), which comprises a FET outer shell. A fluorescent plate is embedded in the front wall of the FET outer shell, and a P-type semiconductor, an oxide, metal, a first N-type semiconductor and a second N-type semiconductor are arranged inside the FET outer shell. In the invention, a drain welding point is welded inside a drain groove, a gate welding point is welded inside the metal, a source welding point is welded inside the first N-Type semiconductor, a drain, a gate and a source can be respectively welded into the drain groove, a gate groove and a source groove through the drain welding point, the gate welding point and the source welding point, when the drain, the gate and the source are oxidatively corroded and cannot be used normally, the corresponding welding points can be melt through a welding gun, the oxidatively corroded pins are replaced, and the problem of the traditional one-piece structure that oxidative corrosion of any pin of the drain, the gate and the source will lead to the scrapping of the entire FET is avoided.

Description

technical field [0001] The invention belongs to the technical field of electronic components, and in particular relates to an efficient protection and easy-to-use field effect tube. Background technique [0002] The working principle of field effect transistors is to put it in one sentence, that is, "the ID flowing through the channel between the drain and the source is used to control the ID of the reverse-biased gate voltage formed by the pn junction between the gate and the channel", more correctly Said, the width of the ID flowing through the channel, that is, the cross-sectional area of ​​the channel, is controlled by the change of the reverse bias of the pn junction, resulting in the change of the expansion of the depletion layer. In the unsaturated region of VGS=0, the expansion of the transition layer is represented Because it is not very large, according to the electric field of VDS applied between the drain and the source, some electrons in the source region are pu...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a highly efficient and easy-to-use field effect transistor to solve the problem that the drain, gate and source are exposed to the air for a long time when they are idle, which is prone to oxidation and affects the field effect. The normal use of the tube, and when the drain, gate and source are damaged, they cannot be replaced individually, resulting in the scrapping of the entire field effect tube, and the problem of the field effect tube cannot be quickly found when the ring mirror is dark

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