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Preparation method of rear surface silicon nitride multilayer film of PERC (passivated emitter rear cell)

A technology of silicon nitride film and silicon nitride coating, which is applied in the manufacture of circuits, electrical components, and final products to achieve the effects of improving light absorption, increasing reflectivity, and improving efficiency

Inactive Publication Date: 2018-02-23
EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, silicon nitride on the back side of PERC technology mainly adopts single-layer film technology, and the normal backside reflectivity can only reach about 35%.

Method used

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  • Preparation method of rear surface silicon nitride multilayer film of PERC (passivated emitter rear cell)

Examples

Experimental program
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Effect test

Embodiment 1

[0016] Such as figure 1 As shown, it is Example 1 of the present invention, a method for preparing a silicon nitride multilayer film on the back of a PERC battery. The back of the silicon wafer of the battery is subjected to texturing, diffusion, phosphorus washing, rear passivation deposition, annealing, and the back of the battery. Silicon nitride film coating, silicon nitride coating on the front of the battery, laser and printing sintering, silicon nitride coating on the back of the battery adopts double-layer silicon nitride coating, and the n value of the second layer of silicon nitride film is greater than that of the first layer of silicon nitride The n-value of the membrane.

[0017] The specific double-layer membrane is as follows:

[0018] The thickness of the first silicon nitride film is 50-100nm, the n value is 2.0-2.03, and SiH 4 400~800sccm (cubic centimeters per minute), NH 3 6000-10000sccm (cubic centimeters per minute), pressure 1700mtorr (millitorr), rad...

Embodiment 2

[0026] Embodiment 2 of the present invention, a method for preparing a silicon nitride multilayer film on the back of a PERC battery, which sequentially performs texturing, diffusion, phosphorus washing, rear passivation deposition, annealing, and silicon nitride plating on the back of the battery silicon wafer Silicon nitride coating on the front of the battery, laser and printing sintering, the silicon nitride coating on the back of the battery adopts three layers of silicon nitride coating,

[0027] The specific three-layer film is as follows:

[0028] The thickness of the first silicon nitride film is 50-100nm, the n value is 2.0-2.03, and SiH 4 400~800sccm (cubic centimeters per minute), NH 3 6000-10000sccm (cubic centimeters per minute), pressure 1700mtorr (millitorr), radio frequency power 5000-9000 watts.

[0029] The thickness of the second layer of silicon nitride film is 50-100nm, the n value is 2.20-2.30, using SiH 4 800~1200sccm, NH 3 3000~6000sccm, pressure ...

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Abstract

The invention belongs to the solar cell technical field and a preparation method of the rear surface silicon nitride multilayer film of a PERC (passivated emitter rear cell). According to the method of the invention, texturing, diffusion, phosphorus washing, rear passivation and deposition and annealing are sequentially performed on the rear surface of the silicon wafer of the cell; the rear surface of the cell is plated with a silicon nitride film; the front surface of the cell is plated with silicon nitride; laser treatment is performed; printing is performed; sintering is performed; the silicon nitride film coating the rear surface of the cell is a double-layer or multi-layer silicon nitride coating film; the refractive index of the inner layer of the film is lower than the refractive index of the outer layer of the film; and an n value represents the refractive index. According to the preparation method of the rear surface silicon nitride multilayer film of the PERC, the rear silicon nitride multi-layer film is adopted, and therefore, the reflectivity of the rear surface of the cell for light can be improved, light absorption is improved effectively, obvious gain for short-circuit current is realized, and the efficiency of the cell can be improved.

Description

technical field [0001] The invention relates to the technical field of solar cell preparation, in particular to a method for preparing a silicon nitride multilayer film on the back of a PERC cell. Background technique [0002] PERC technology, that is, passivated emitter back contact, can greatly reduce the electrical recombination rate of the back surface by forming a passivation layer on the back of the solar cell, form a good internal optical back reflection mechanism, and increase the open circuit voltage and short circuit current of the battery, thereby improving The conversion efficiency of the battery. [0003] PERC solar cell has the advantages of simple process, low cost, and high compatibility with existing cell production lines. It is a newly developed high-efficiency solar cell. It has received extensive attention from the industry and is expected to become the mainstream direction of high-efficiency solar cells in the future. . [0004] For the production of c...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0203
CPCH01L31/0203H01L31/18Y02P70/50
Inventor 朱露孙铁囤姚伟忠
Owner EGING PHOTOVOLTAIC TECHNOLOGY CO LTD