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A charge-trapping storage device with a bidirectional step band storage oxide and its preparation method

A storage device, bidirectional ladder technology, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve problems such as high density of shallow-level defect states, low charge storage density, and easy loss of stored charge.

Active Publication Date: 2020-01-14
ANYANG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional nitride (Si 3 N 4 ) as a storage layer faces problems such as low trap state density, low charge storage density and high shallow energy level defect state density, resulting in easy loss of stored charge

Method used

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  • A charge-trapping storage device with a bidirectional step band storage oxide and its preparation method
  • A charge-trapping storage device with a bidirectional step band storage oxide and its preparation method
  • A charge-trapping storage device with a bidirectional step band storage oxide and its preparation method

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Embodiment 1

[0025] Embodiment 1: The preparation process of a charge-trapping storage device with a stacked storage oxide is as follows:

[0026] a) Place the substrate material cleaned with acetone and hydrofluoric acid on the tray of the chamber of the atomic layer deposition system, and then use the atomic layer deposition system to grow a layer of 2nm SiO on the surface of the substrate 2 As a tunneling oxide, where SiO 2 The precursor is SiH[N(CH 3 ) 2 ] 3 , H 2 O is used as the oxygen source, and the temperature in the deposition chamber is 300 °C;

[0027] b) Using an atomic layer deposition system to grow a stacked film structure on the surface of the tunnel oxide as a storage oxide, the stacked structure includes nine layers of films grown sequentially, wherein the growth sequence of each layer of films is [La 2 o 3 ] m [SiO 2 ] n [La 2 o 3 ] m [SiO 2 ] n , m and n represent the number of pulse cycles in the atomic layer deposition process, the order is: Mr. grow m ...

Embodiment 2

[0030] Example 2: With a single storage oxide La 2 o 3 The preparation process of the charge-trapping memory device is as follows:

[0031] a) Place the substrate material cleaned with acetone and hydrofluoric acid on the tray of the chamber of the atomic layer deposition system, and then use the atomic layer deposition system to grow a layer of 2nm SiO on the surface of the substrate 2 As a tunneling oxide, where SiO 2 The precursor is SiH[N(CH 3 ) 2 ] 3 , H 2 O is used as the oxygen source, and the temperature in the deposition chamber is 300 °C;

[0032] b) Growth of a single storage oxide La on the tunnel oxide surface using an atomic layer deposition system 2 O, the precursor is La(N(Si(CH 3 ) 3 ) 2 ) 3 , the number of cycles is 90, H 2 O as an oxygen source;

[0033] c) Using an atomic layer deposition system to grow a layer of 15nm SiO on the surface of the previously formed stacked storage oxide 2 As a blocking oxide, the precursor is SiH[N(CH 3 ) 2 ] ...

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Abstract

The invention discloses a method for preparing a charge trapping memory device with a bidirectional stepped energy band memory oxide. An atomic layer deposition system prepares tunneling oxide, stacked memory oxide and blocking oxide. The stacked memory oxide comprises nine successively grown films. Each film is [M]m[SiO2]n[M]m[SiO2]n, M can be selected from any one of La2O3, ZrO2, and HfO2, m andn represent the number of deposition cycles in an atomic layer deposition process. A growth sequence comprises growing m cycles of M, growing n cycles of SiO2, growing m cycles of M, and finally growing n cycles of SiO2, wherein m+n=5. From the tunneling oxide, the m is equal to 1 in the first layer, m is equal to 2 in the second layer, m is equal to 3 in the third layer, m is equal to 4 in the fourth layer, m is equal to 5 in the fifth layer, m is equal to 4 in the sixth layer, m is equal to 3 in the seventh layer, m is equal to 2 in the eighth layer, and m is equal to 1 in the ninth layer.The bidirectional stepped energy band is formed by adjusting the growth order and the number of deposition cycles of M and SiO2 in each layer in the stacked memory oxide.

Description

technical field [0001] The invention belongs to the field of microelectronic devices and materials thereof, and relates to a bidirectional ladder energy band storage oxide and its application in nonvolatile storage devices. Background technique [0002] As the feature size of traditional floating-gate non-volatile memory gradually approaches its physical limit, searching for new storage structures has become a research hotspot, mainly focusing on finding solid-state memories with low power consumption and high storage density, such as those that can be used in cameras, mobile phones, etc. and storage devices on your computer. Among the many non-volatile memory candidate structures, the silicon-oxide-nitride-oxide-polysilicon (SONOS) type charge memory has been widely studied as the most promising storage structure, and the oxide of silicon is followed by the Tunneling oxide, nitride as storage layer, oxide next to polysilicon electrode as blocking oxide. However, conventio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/792H01L21/336H01L21/28H01L29/51
CPCH01L29/40117H01L29/513H01L29/517H01L29/66833H01L29/792
Inventor 汤振杰李荣胡丹
Owner ANYANG NORMAL UNIV