A kind of preparation method of self-catalytic functional nanometer quantum wire
A functional nanometer and quantum wire technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve problems such as pollution, avoid impurity pollution, high purity, high and medium wave infrared light conversion efficiency and stability effects
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Embodiment 1
[0031] The steps of the preparation method of the self-catalytic functional nanometer quantum wire are as follows:
[0032] Using liquid In to dissolve Sb at 0°C to obtain alloy droplets with a mass percentage of Sb of 1% for later use;
[0033] a. In MBE equipment, add In-Sb alloy droplets on the Si substrate in the growth chamber and activate at 200°C for 40 minutes to generate nucleation sites (the amount of In-Sb alloy droplets added per 1 cm 2 Si substrate corresponds to 4 mg), after the activation is completed, the growth chamber is kept at 150°C for 10 minutes;
[0034] b. Keep the growth chamber at 150°C, open the valves of the evaporation sources In, As, and Sb leading to the growth chamber and control the equivalent partial pressure ratio of each beam to grow nanowires. After 20 minutes of growth, close all the shutters of the evaporation sources at the same time to obtain InAsSb nanowires. Quantum wire; during growth, the equivalent partial pressure ratios of Sb, I...
Embodiment 2
[0037] Using liquid In to dissolve Sb at -5°C to obtain alloy droplets with a mass percentage of Sb of 2% for later use;
[0038] a. In MBE equipment, add In-Sb alloy droplets on the Si substrate in the growth chamber and activate at 250°C for 60 minutes to generate nucleation sites (the amount of In-Sb alloy droplets added per 1cm 2 Si substrate corresponds to 5 mg), after the activation is completed, the growth chamber is kept at 180°C for 15 minutes;
[0039] b. Insulate the growth chamber at 270°C, open the valves of the evaporation sources In, As and Sb leading to the growth chamber, and control the equivalent partial pressure ratio of each beam to grow nanowires. After 60 minutes of growth, close all the shutters of the evaporation sources at the same time to obtain InAsSb Nano quantum wire; during growth, the equivalent partial pressure ratios of Sb, In, and As beams are controlled to be 5%, 1%, and 94%, respectively, and the total pressure of the growth chamber is 0.1M...
Embodiment 3
[0042] The steps of the preparation method of the self-catalytic functional nanometer quantum wire are as follows:
[0043] Using liquid In to dissolve Sb at 10°C to obtain alloy droplets with a mass percentage of Sb of 3% for later use;
[0044] a. In MBE equipment, add In-Sb alloy droplets on the Si substrate in the growth chamber and activate at 300°C for 90 minutes to generate nucleation sites (the amount of In-Sb alloy droplets added per 1cm 2 Si substrate corresponds to 7 mg), after the activation is completed, the growth chamber is kept at 200 ° C for 20 min;
[0045] b. Insulate the growth chamber at 360°C, open the valves of the evaporation sources In, As, and Sb leading to the growth chamber and control the equivalent partial pressure ratio of each beam to grow nanowires. After 80 minutes of growth, close all the shutters of the evaporation sources at the same time to obtain InAsSb Nano quantum wire; control the equivalent partial pressure ratios of Sb, In, and As bea...
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