Integrated type passive wireless micro mechanical switch and preparation method therefor
A micro-mechanical switch, passive wireless technology, applied in the field of microelectronics, can solve the problems of increased research and development difficulty, increased research and development costs, long interconnection lines, etc., and achieves reduced interconnection line length, improved system reliability, and reduced area. Effect
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[0023] The present invention will be further explained below in conjunction with the accompanying drawings.
[0024] The integrated passive wireless micromechanical switch preparation method of the present invention is based on a P-type substrate 10, an N well 11, a P well 12, an N+ doped region 13, a P+ doped region 14, and a first insulating layer arranged sequentially from bottom to top. 15. Realization of the first metal layer 17, the second insulating layer 18 and the second metal layer 19; using multi-step doping process, coating process, electroplating process and sacrificial layer technology, the diode 2 and capacitor are simultaneously prepared on one chip 3. An integrated passive wireless micro-mechanical switch structure of the resistor 4, the micro-mechanical switch 5 and the inductance coil 6;
[0025] figure 1 It is the cross-sectional view of the chip obtained through the following steps 1 and 2.
[0026] Step 1: Perform N-type doping on the P-type substrate 1...
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