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Low-temperature polysilicon thin film and method for manufacturing transistor

A technology of low-temperature polysilicon and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of reducing the semiconductor characteristics of silicon films, achieve the effects of soothing extrusion, improving protrusion problems, and reducing the number of impurities

Active Publication Date: 2019-08-06
HKC CORP LTD
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  • Summary
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  • Claims
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Problems solved by technology

However, in laser annealing, in addition to the heating of the silicon film, the temperature of the glass substrate under the silicon film also rises due to the absorption of heat energy, causing impurities in the glass substrate to diffuse into the silicon film, and these impurities will reduce the semiconductor properties of the silicon film. characteristic

Method used

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  • Low-temperature polysilicon thin film and method for manufacturing transistor
  • Low-temperature polysilicon thin film and method for manufacturing transistor
  • Low-temperature polysilicon thin film and method for manufacturing transistor

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Embodiment Construction

[0030] Specific structural and functional details disclosed herein are representative only and are for purposes of describing example embodiments of the present application. This application may, however, be embodied in many alternative forms and should not be construed as limited to only the embodiments set forth herein.

[0031] In the description of this application, it should be understood that the terms "central", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", The orientation or positional relationship indicated by "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the application and simplifying the description, rather than indicating or implying the referred device Or components must have a particular orientation, be constructed and operate in a particular orientation and therefore should not be construed as limiting the application. ...

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Abstract

The present application proposes a method for manufacturing a low-temperature polysilicon thin film, comprising: forming a buffer layer on a substrate; forming a first silicon layer on the buffer layer; forming a second silicon layer on the first silicon layer on, and form a barrier substrate impurity interface between the first silicon layer and the second silicon layer, wherein the second silicon layer is thicker than the first silicon layer; and for the first silicon layer And the second silicon layer is annealed to form a polysilicon layer.

Description

technical field [0001] The present application relates to a method for manufacturing a silicon thin film and a transistor, in particular to a method for manufacturing a low-temperature polysilicon thin film and a transistor. Background technique [0002] Flat panel display devices have been widely used in various fields. Liquid crystal display devices have gradually replaced traditional cathode ray tube display devices due to their superior characteristics such as light and thin body, low power consumption and no radiation, and have been applied to many types of electronic products. Among them, such as mobile phones, portable multimedia devices, notebook computers, LCD TVs and LCD screens, etc. [0003] A liquid crystal display device includes components such as a display panel. An active matrix liquid crystal display panel is a common display panel at present, and includes an active matrix substrate, an opposite substrate, and a liquid crystal layer sandwiched between the t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/786
CPCH01L29/66742H01L29/78618H01L29/66765H01L29/78696H01L29/78678H01L21/324H01L29/6675
Inventor 何怀亮
Owner HKC CORP LTD
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