Substrate processing method and substrate processing apparatus
A substrate processing method and substrate technology, which are applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., and can solve problems such as uneven surface tension and pattern collapse
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Embodiment 1
[0055] (constitute)
[0056] figure 1 is an internal cross-sectional view of the substrate processing apparatus 1 according to Embodiment 1 seen from the front. The substrate processing apparatus 1 constitutes a part of a batch system that performs etching, cleaning, and drying on a plurality of substrates (for example, semiconductor substrates) W, and mainly corresponds to a unit that performs drying.
[0057]This substrate processing apparatus 1 is an apparatus that supplies IPA (isopropyl alcohol) as an organic solvent to a substrate that has been rinsed (cleaned) with pure water, and dries it. The substrate processing apparatus 1 includes: a chamber 10, a processing tank 20, a holding mechanism 30, an elevating mechanism (corresponding to the "elevating apparatus" according to the present invention) 40, nozzles 51 to 55, and valves 61 to 65 for opening and closing the respective nozzles. , for supplying nitrogen to the nozzle 51 (N 2 ) gas or other inert gas supply sour...
Embodiment 2
[0088] Figure 5 is a flowchart of processing according to Embodiment 2. It should be noted, Figure 5 It is a flowchart of processing in the second half that differs from that in Embodiment 1. Figure 6 It is a figure for explaining the outline|summary of the processing procedure of Example 2. In addition, the same code|symbol as Example 1 is attached|subjected to the same process as Example 1, and description is abbreviate|omitted.
[0089] In this embodiment, after S8, the spraying of the water-repellent agent is stopped, and thereafter, the depressurization in the chamber 10 is temporarily stopped at any time ( Figure 5 , Figure 6 : S19). Accordingly, the concentration of the IPA vapor that is started to be supplied in S8 can be further increased, and the amount of IPA condensation on the surface of the substrate W can be further increased.
[0090] Thereafter, stop supplying IPA steam, start supplying inert gas and also start to depressurize the chamber 10 ( Fig...
Deformed example 1
[0093] Figure 7 It is a processing flowchart of Modification 1. It should be noted, Figure 7 It is a processing flow chart of the first half that differs from that of the first embodiment. Figure 8 It is a figure for explaining the outline|summary of the processing procedure of the modification 1.
[0094] In this modified example, stop spraying IPA steam after S5, and start spraying water-repellent agent steam ( Figure 7 , Figure 8 : S26). In this step, it is possible to shorten the time required for the IPA on the surface of the substrate W to be replaced by the water-repellent agent by switching between spraying the IPA vapor and spraying the water-repellent agent vapor.
[0095] After this, stop the injection of hydrophobic agent steam, start the injection of IPA steam ( Figure 7 , Figure 8 : S28). In this step, the time required for replacing the water-repellent agent on the surface of the substrate W with IPA can be shortened by switching between spraying ...
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