Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Active write-back hierarchical instruction memory structure fault-tolerant method and device

An instruction memory, memory technology, applied in the directions of instrumentation, error detection/correction, response error generation, etc., can solve problems such as increasing the vulnerability of digital signal processor instructions, simple instruction functions, and abnormal program execution.

Active Publication Date: 2021-02-19
XIAN MICROELECTRONICS TECH INST
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, the core algorithm instruction needs to have multiple control fields, and the instruction encoding field is longer; while the general instruction function is simple, the encoding field is shorter
This further increases the vulnerability of digital signal processor instructions, because once an error occurs in the field for distinguishing long and short instructions, the digital signal processor will not be able to distinguish and access subsequent instructions according to the correct width, resulting in abnormal program execution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Active write-back hierarchical instruction memory structure fault-tolerant method and device
  • Active write-back hierarchical instruction memory structure fault-tolerant method and device
  • Active write-back hierarchical instruction memory structure fault-tolerant method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0072] The present invention will be further described in detail below in conjunction with specific embodiments, which are explanations of the present invention rather than limitations.

[0073] At present, the fault-tolerant hardening of memory by most processors is a "passive" method, as shown in the attached figure 1As shown, it illustrates the fault-tolerant process of "passive" loading of instruction memory. The system integrates two processors 110 and 120 . Each processor integrates independent instruction memory 111 and 121. Instruction word verification logic 112 and 122 is integrated between the processor and the instruction memory. Processors 110 and 120 are connected to external memory or shared memory 140 through on-chip bus or on-chip network 130 . The output instruction data of the external memory or the shared memory is passed through the error checking and correction logic ECC 141, and after the parity code, it is written into the instruction memory 111 and 1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a fault-tolerant method and device for a hierarchical instruction memory structure that can be actively written back. The device includes a hierarchical instruction memory, an instruction error correction and detection module, an instruction word register, and an instruction address register; the method includes 1. starting and running the processor; Take out the instruction word data from the instruction memory; 3. The instruction word data is sent to the instruction error correction and detection module; 4. Judging the error correction and error detection result "no error or a correctable error occurs"; Yes, continue to step 5; No, go to step 10; 5. Write the instruction word into the instruction word register; 6. Update the instruction address register; 7. Determine that a correctable error occurs; Yes, continue to step 8; No, turn to step 9; 8. Write the instruction word data back to the hierarchical instruction memory; 9. The processing ends; go to step 2, and process the address of the next instruction; 10. An uncorrectable error occurs in the instruction word data, and the processor hangs. The invention realizes the fault tolerance of the instruction and the instruction memory, and has less hardware cost.

Description

technical field [0001] The invention belongs to the field of microprocessor design, and relates to the design of a highly reliable and high-performance processor fault-tolerant structure, in particular to a fault-tolerant method and device for a hierarchical instruction memory structure that can be actively written back. Background technique [0002] On-chip memory is a sensitive unit within the processor. On-chip memory usually occupies a large amount of area in the entire processor and is vulnerable to high-energy particles, cosmic rays, and other factors. Especially as the feature size of integrated circuits shrinks sharply, decreasing power supply voltage, increasing operating frequency, decreasing node capacitance and rapidly increasing chip transistor capacity make memory cells more and more sensitive to the working environment. Therefore, in order to improve the reliability of the processor, the on-chip memory needs to be hardened for fault tolerance. Moreover, in m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/07
CPCG06F11/0721G06F11/0793
Inventor 曹辉何卫强杨靓
Owner XIAN MICROELECTRONICS TECH INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products