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Materials containing semiconductor nanoparticles and light-emitting devices incorporating it

A light-emitting device and nanoparticle technology, applied in nano-optics, semiconductor devices, light-emitting materials, etc., can solve problems such as quantum yield loss, temperature instability, and low performance

Active Publication Date: 2021-06-22
NANOCO TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0020] In phosphor flakes, QDs face issues similar to those in devices based on the direct addition principle, namely photo-oxidation, temperature instability and loss of quantum yield with increasing temperature as discussed above
Furthermore, problems arise from the indirect phosphor form itself, such as a) light trapping in waveguides from sheet structures degrades performance, b) high material usage and c) dependent on distance from LED light source compared to direct LEDs low performance

Method used

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  • Materials containing semiconductor nanoparticles and light-emitting devices incorporating it
  • Materials containing semiconductor nanoparticles and light-emitting devices incorporating it
  • Materials containing semiconductor nanoparticles and light-emitting devices incorporating it

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0113] LED covers machined from solid polymethylmethacrylate (PMMA) were washed by suspending in a water / detergent mixture and sonicating for 10 minutes. It is then washed with water and finally with methanol. Each wash was performed by sonicating for 10 min in the aforementioned solvent. Dry the cap with compressed air. In a nitrogen-filled glove box, use a micropipette to dispense 3 mL of the QD / acrylate resin mixture into the LED cover wells. Then pass through from 365nm LED (250mW / cm 2 ) to UV light for 180 seconds to cure the resin. The lid was turned over and the same curing cycle was repeated. Subsequently, a sheet of 3M 360M Encapsulation Barrier Film was applied to the lid to seal the QD-containing resin. This was done as follows: 2 ml of Optocast 3553 UV curable epoxy resin was deposited on top of the QD containing resin and spread evenly across the entire face. A piece of 3M 360M film cut to the same dimensions as the side to be encapsulated was deposited on O...

Embodiment 2

[0115] Quantum dot-cap light-emitting device fabrication

[0116] The completed cover as described in Example 1 was used in combination with LEDs in the following manner. In a nitrogen filled glove box, 2 milliliters of Optocast 3553 UV curable epoxy was deposited onto the 3M 360M encapsulant film of the completed cap as described in Example 1 . A silicone filled blue light (3528TOP package) LED was then placed into the cover so that the LED faced the cover and excess Optocast 3553 was squeezed out as the LED was pushed into place. In this configuration, the cover and LEDs are powered from 365nm LEDs (250mW / cm 2 ) to UV light for 20 seconds to cure Optocast 3553. The cap and LED were then inverted and exposed to UV light again under the same conditions and timing to further cure the Optocast 3553. The completed Cap-LED was left in the glove box overnight to allow the Optocast 3553 to cure completely. Optionally, this can be accelerated by baking the cap-LED at 50°C for 12 ...

Embodiment 3

[0118] QD-LEDs incorporating a spacer between the LED chip and the QD-containing medium

[0119] Direct acrylic LEDs have features such as Figure 7 The multilayer structure shown. The lighting device 1 comprises a conventional LED package 2 and a standard LED chip 3 . Just above the LED chip 3 in the LED well 4 , a sufficient amount of commercially available silicone resin 5 is placed to cover and immerse the LED chip 3 . On top of the silicone layer 5 is placed a sufficient amount of QD-monomer mixture 6 to fully fill the LED well 4 . Since the silicone resin 5 immerses the LED chip 3 , there is a space filled with the silicone resin 5 between the chip 3 and the QD monomer mixture 6 . In this way, the QD-containing mixture 6 is insulated from potentially harmful high temperatures generated by the chip 3 during operation. Around the perimeter of the opening to the LED well 4 is placed a UV curable epoxy 7 on which is placed a thin layer of encapsulating material 8 such as g...

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Abstract

The invention provides a luminous device cover that is constructed to be constructed on the luminous device including a light source.The cover is limited to the well area that accommodates semiconductor nanoparticles, so that when the cover is set on the luminous device, the semiconductor nanoparticles and the light source optical communication of the light emitting device.It also provides a luminous device that contains a light source and this cover, as well as methods to prepare this cover and device.

Description

[0001] The application date of this application is May 31, 2012, the international application number is PCT / GB2012 / 051217, the application number entering the Chinese national phase is 201280026454.5, and the title of the invention is "Materials containing semiconductor nanoparticles and luminescence combined with it" Device" is a divisional application of the Chinese invention application. technical field [0002] The present invention relates to semiconductor nanoparticle based materials for use in light emitting devices such as but not limited to light emitting diodes (LEDs). The present invention also relates to light emitting devices incorporating semiconductor nanoparticle-containing materials. In particular but not exclusively, the present invention relates to protective covers incorporating quantum dots (QDs) for use in the manufacture of QD-based light-emitting devices, methods for manufacturing said covers, methods of using said covers to manufacture such devices, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/02C09K11/56C09K11/70C09K11/88F21V15/00H01L33/48H01L33/50H01L33/52B82Y20/00
CPCH01L33/507B82Y20/00C09K11/02C09K11/565C09K11/70C09K11/883F21V15/00H01L33/48H01L33/52H01L2224/48247H01L2224/48091H01L2924/00014H01L33/501Y10S977/773H01L33/50
Inventor 詹姆斯·哈里斯伊马德·纳萨尼奈杰尔·皮克特
Owner NANOCO TECH LTD
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