Hybrid plasma generator for processing silicon-based material

A technology of plasma and silicon-based materials, applied in the direction of plasma, electrical components, etc., can solve the problems that the quality of the machined surface cannot reach the ideal target, the shape of the plasma jet is unstable, and the diameter of the beam spot cannot be obtained, so as to overcome the easy damage. Quartz glass tube, optimized ignition process, morphologically stable effect

Pending Publication Date: 2018-04-17
SICHUAN UNIV
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Problems solved by technology

This method can excite the working gas to generate active reactive particles, and rely on the chemical reaction between the active reactive particles and the silicon-based material to generate gas phase products, which can avoid surface deterioration and subsurface damage on the processed surface, but in the induction coil area, The Lorentz force will induce a strong swirling eddy current, resulting in unstable shape of the plasma jet at the jet port of the device during the processing, unable to obtain a constant beam spot diameter, and the quality of the processed surface cannot reach the ideal goal; and there are The skin effect of the current, the high temperature area deviates from the axis of the quartz glass tube, and the energy is not fully coupled into the plasma jet, resulting in low processing efficiency

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  • Hybrid plasma generator for processing silicon-based material
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  • Hybrid plasma generator for processing silicon-based material

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Embodiment Construction

[0026] In order to better explain the present invention, the specific implementation of the present invention will now be described in detail in conjunction with the accompanying drawings.

[0027]A hybrid plasma generator for etching processing of silicon-based materials disclosed by the invention is composed of a DC plasma generator (10) and a radio frequency inductively coupled plasma generator (20). Among them, the DC plasma generator is mainly composed of the cathode part, the arc starting casing, the first anode body, the anode casing, the second anode part, the first insulating sleeve, and the second insulating sleeve; the RF inductively coupled plasma generator is mainly composed of quartz glass Tube, composed of induction coils. The cathode part is assembled by the cathode head (118) and the cathode seat. The cooling water enters from the cooling water inlet (102), flows through the internal cooling water channel, and flows out from the cooling water outlet (113); the...

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Abstract

A hybrid plasma generator for processing silicon-based materials, mainly composed of a DC plasma generator and a radio-frequency inductively coupled plasma generator, and a common RF-coupled plasma generator for processing silicon-based materials In comparison, this hybrid plasma generator has the following outstanding advantages: 1. High processing efficiency, under the action of the magnetic field of the induction coil, the arc plasma jet is excited twice, and more energy is obtained per unit time to excite the working gas, so that the unit volume The number of reactive particles in the middle increases; 2. Optimizing the ignition process, relying on the electric spark generated by the cathode part and the anode part to complete the ignition, overcoming the problem that the traditional radio frequency inductively coupled plasma generator is easy to damage the quartz glass tube during the ignition process; 3. After upgrading The surface quality of silicon-based materials, the plasma jet that maintains a constant beam spot diameter for a long time under the condition of constant setting parameters, realizes the deterministic processing of the material surface.

Description

technical field [0001] The invention discloses a hybrid plasma generator used for processing silicon-based materials, which belongs to the field of plasma processing equipment. Background technique [0002] In recent years, silicon-based ultra-precision parts have become more and more widely used in aerospace, astronomical observation and other fields, and the demand is increasing. Requirements such as degenerated layers and subsurface damage. In order to achieve the above goals, plasma excitation such as CF 4 A kind of trajectory surface processing method dominated by active reactive particles generated by working gas has received great attention from researchers at home and abroad. [0003] At present, the way to excite the working gas to generate active reactive particles mainly relies on radio frequency inductively coupled plasma generators. This method can excite the working gas to generate active reactive particles, and rely on the chemical reaction between the acti...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/32H05H1/30
CPCH05H1/32H05H1/30
Inventor 余德平吴杰钟彦杰徐继业姚进
Owner SICHUAN UNIV
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