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Atomic layer deposition preparation method for large-area molybdenum disulfide film

An atomic layer deposition, molybdenum disulfide technology, applied in coating, gaseous chemical plating, metal material coating process and other directions, can solve problems such as inability to promote large-scale, poor quality of molybdenum disulfide film, difficult reaction and so on

Active Publication Date: 2018-04-20
YUNNAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For a long time, due to the superiority of atomic layer deposition technology, people have been trying to use this technology to prepare molybdenum disulfide thin films, but because atomic layer deposition technology requires the precursor to reach the surface of the deposition substrate to produce chemical adsorption and self-saturated surface reaction, Two or more precursors have to react chemically on the surface of the deposition substrate to form the target film at low temperature, while the traditional molybdenum and sulfur sources generally use molybdenum pentachloride (MoCl 5 ) and hydrogen sulfide (H 2 S) gases, their self-adsorption ability is insufficient, the reaction is difficult at low temperature, and the quality of the prepared molybdenum disulfide film is poor
In the past two years, there have been reports abroad that molybdenum hexacarbonyl and hydrogen sulfide gas were used as precursors of molybdenum and sulfur to successfully prepare molybdenum disulfide thin films with good quality. Area promotion

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] (1) Si / SiO 2 The substrate is cleaned and dried, and put into the reaction chamber of the atomic layer deposition equipment;

[0015] (2) Vacuum the reaction chamber below 0.5Pa, and set the temperature of the reaction chamber to 150°C;

[0016] (3) Using molybdenum hexacarbonyl (Mo(CO) 6 ), Dimethyl disulfide (C 2 h 6 S 2 ) as the precursor source of molybdenum and sulfur, the temperature of the source bottle of molybdenum hexacarbonyl and dimethyl disulfide is set to room temperature, the temperature of the precursor pipeline is set to 70 ° C, using high-purity N 2 As a carrier and cleaning gas, the gas flow rate is 160 sccm;

[0017] (4) In a growth cycle, set Mo(CO) 6 The first pulse deposition time of the precursor is 400ms, wait for 1s, set Mo(CO) 6 The second pulse deposition time in the reaction chamber is 400ms to enhance the Mo(CO) 6 self-adsorption capacity. Then clean the substrate surface with high-purity nitrogen for 5s, set C 2 h 6 S 2 The pul...

Embodiment 2

[0020] (1) Clean and dry the sapphire substrate, and put it into the reaction chamber of the atomic layer deposition equipment;

[0021] (2) Vacuum the reaction chamber below 0.5Pa, and set the temperature of the reaction chamber to 160°C;

[0022] (3) Using molybdenum hexacarbonyl (Mo(CO) 6 ), Dimethyl disulfide (C 2 h 6 S 2 ) as the precursor source of molybdenum and sulfur, the temperature of the source bottle of molybdenum hexacarbonyl and dimethyl disulfide is set to room temperature, the temperature of the precursor pipeline is set to 80 ℃, using high-purity N 2 As a carrier and cleaning gas, the gas flow rate is 200 sccm;

[0023] (4) In a growth cycle, set Mo(CO) 6 The first pulse deposition time of the precursor is 500ms, wait for 1s, set Mo(CO) 6 The second pulse deposition time in the reaction chamber is 500ms to enhance the Mo(CO) 6 self-adsorption capacity. Then clean the substrate surface with high-purity nitrogen for 5s, set C 2 h 6 S 2 The pulse depo...

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Abstract

The invention discloses an atomic layer deposition preparation method for a large-area molybdenum disulfide film. The atomic layer deposition preparation method for the large-area molybdenum disulfidefilm is characterized in that molybdenum hexacarbonyl (Mo(CO)6) and dimethyl disulfide (C2H6S2) are used as precursor sources of molybdenum and sulfur for atomic layer deposition (ALD), a conventional atomic layer deposition device is adopted, and the large-area molybdenum disulfide film is obtained by optimizing reaction parameters. Based on the superiority of the atomic layer deposition technique, the film prepared through the method has the characteristics of large area, good compactness, excellent performance, stable deposition speed, controllable thickness and the like, the quality of the film can be improved, and the application of the molybdenum disulfide film is further enhanced and widened.

Description

technical field [0001] The invention belongs to the technical field of inorganic nano-membrane materials, and in particular relates to a deposition method for preparing a large-area molybdenum disulfide thin film. Background technique [0002] Molybdenum disulfide has a graphene-like sheet structure and is a common transition metal sulfide. It is usually widely used in the field of friction lubrication because of its excellent lubricating properties. In addition to being used as a lubricating material, molybdenum disulfide can also be used as a hydrogenation catalyst or an electrocatalytic hydrogen production catalyst, which is widely used in petroleum hydrodesulfurization, denitrogenation, hydrofining, hydrogen production and other fields. It is a very promising Industrial hydrogenation catalysts and electrocatalytic hydrogen production catalysts. In addition, molybdenum disulfide can also be used in various fields such as intercalation materials, lithium-ion battery catho...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/455
Inventor 杨培志赵恒利杨雯杨启鸣张志恒
Owner YUNNAN NORMAL UNIV
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