Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing liquid, polishing liquid set, and substrate polishing method

一种研磨方法、研磨液的技术，应用在研磨液领域，能够解决研磨损伤等问题，达到低研磨损伤、提高研磨选择性、抑制研磨速度的效果

Active Publication Date: 2018-04-20
RESONAC CORP
View PDF20 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In addition, in recent years, in the manufacturing process of semiconductor elements, it is required to achieve further miniaturization of wiring, and the occurrence of polishing damage during polishing has become a problem.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing liquid, polishing liquid set, and substrate polishing method
  • Polishing liquid, polishing liquid set, and substrate polishing method
  • Polishing liquid, polishing liquid set, and substrate polishing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0239] By mixing 100 g of the storage solution for the additive liquid, 850 g of water, and 50 g of the storage solution for the cerium hydroxide suspension, a pH 6.0 containing 0.05% by mass of cerium hydroxide-containing abrasive grains and 0.05% by mass of the branched polymer was prepared. The polishing solution for CMP in which the storage solution for the additive solution contains a branched polymer [manufactured by BYK-Chemie GmbH, trade name: DISPERBYK-190, non-volatile content: 40% by mass, acid value: 10 mgKOH / g, weight-average molecular weight : 23000] 0.5% by mass, 0.038% by mass of 2-methylimidazole [pH adjuster], and 99.462% by mass of water.

Embodiment 2

[0241] By mixing 100 g of the storage solution for the additive liquid, 850 g of water, and 50 g of the storage solution for the cerium hydroxide suspension, an abrasive grain containing 0.05% by mass of cerium hydroxide, 0.05% by mass of a branched polymer, 0.5% by mass of A polishing solution for CMP of pH 5.9 of polyoxyethylene styrenated phenyl ether, wherein the storage solution for the additive solution contains a branched polymer [manufactured by BYK-Chemie GmbH, trade name: DISPERBYK-190, non-volatile components: 40% by mass, acid value: 10 mgKOH / g, weight average molecular weight: 23000] 0.5% by mass, polyoxyethylene styrenated phenyl ether [manufactured by Kao Corporation, trade name: Emalgen A-500, weight average molecular weight: 3500] 5.0% by mass, 0.082% by mass of 2-methylimidazole [pH adjuster], 0.05% by mass of acetic acid [pH stabilizer], and 94.368% by mass of water.

Embodiment 3

[0243]By mixing 100 g of the storage solution for the additive liquid, 850 g of water, and 50 g of the storage solution for the cerium hydroxide suspension, an abrasive grain containing 0.05% by mass of cerium hydroxide, 0.025% by mass of a branched polymer, and 0.5% by mass of Polyoxyethylene styrenated phenyl ether, 0.003% by mass of diallyldimethylammonium chloride-acrylamide copolymer pH 6.1 polishing solution for CMP, wherein the storage solution for the additive solution contains branched Polymer [manufactured by BYK-Chemie GmbH, trade name: DISPERBYK-190, non-volatile content: 40% by mass, acid value: 10 mgKOH / g, weight average molecular weight: 23000] 0.25% by mass, polyoxyethylene styrenated phenyl ether [manufactured by Kao Corporation, trade name: Emalgen A-500, weight average molecular weight: 3500] 5.0% by mass, diallyldimethylammonium chloride acrylamide copolymer [cationic polymer, Nittobo Co., Ltd. Manufactured, trade name: PAS-J-81, weight average molecular we...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
wavelengthaaaaaaaaaa
visible light transmittanceaaaaaaaaaa
Login to View More

Abstract

Provided is a polishing liquid comprising a liquid vehicle, abrasive grains, and a polymer. The polymer has a first molecular chain where functional groups are directly bonded and a second molecular chain branched from the first molecular chain. The functional groups are at least one selected from the group consisting of carboxyl, carboxylate, hydroxyl, sulfo, and sulfonate groups.

Description

technical field [0001] The invention relates to a grinding liquid, a grinding liquid kit and a grinding method of a matrix. In particular, the present invention relates to a polishing liquid, a polishing liquid kit, and a polishing method for a substrate that can be used in a step of planarizing the surface of a substrate as a manufacturing technique for semiconductor elements. More specifically, the present invention relates to polishing that can be used in the planarization process of shallow trench isolation (Shallow Trench Isolation, hereinafter referred to as "STI") insulating materials, premetal insulating materials, interlayer insulating materials, etc. Grinding method of liquid, grinding fluid kit and matrix. Background technique [0002] In the manufacturing process of semiconductor elements in recent years, the importance of processing technology for increasing density and miniaturization has been increasing. CMP (Chemical Mechanical Polishing) technology, one of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14B24B37/00H01L21/304
CPCB24B37/044H01L21/31053B24B1/00C09G1/02B24B37/00C09K3/1409C09K3/1454H01L21/30625C09K3/1463C09K13/06C09G1/04C09G1/00C09G1/06H01L21/3212H01L21/304
Inventor 阿久津利明南久贵岩野友洋山下哲朗青木雅子深泽正人
Owner RESONAC CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com