Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Application of surface-modified silicon dioxide as abrasive particles

A silicon dioxide and surface modification technology, which is applied in other chemical processes, chemical instruments and methods, etc., can solve problems such as insufficient control of the grinding rate of Si-containing materials, and achieve improved grinding selectivity, increased grinding rate, and improved Effect of Grinding Rate

Inactive Publication Date: 2021-04-20
上海晖研材料科技有限公司
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is that the existing abrasive compositions cannot adequately control the grinding rate of Si-containing materials. For this reason, the present invention provides a surface-modified silicon dioxide as an application of abrasive grains. Surface-modified silica has a better grinding rate for Si-containing materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Application of surface-modified silicon dioxide as abrasive particles
  • Application of surface-modified silicon dioxide as abrasive particles
  • Application of surface-modified silicon dioxide as abrasive particles

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 2

[0047] The synthesis of embodiment 1 silica D

[0048] Weigh 195g of colloidal silicon dioxide (average primary particle size is 35nm, average secondary particle size is 68nm), dissolve in a certain amount of water to form a colloidal silicon dioxide aqueous solution with a mass concentration of 19.5%. Separately, 0.63 mmol (0.73 g) of octaaminophenyl-POSS (CAS: 518359-82-5) was weighed and dissolved in 50 g of methanol.

[0049] The aqueous colloidal silica solution was added dropwise at a rate of 1 mL / min to the methanol solution of the above-mentioned silane coupling agent while stirring the aqueous colloidal silica solution at 25° C. under an air atmosphere at a stirring blade rotation speed of 600 rpm. After the dropwise addition, the pH was adjusted with KOH so that the pH of the solution was 8.0-9.0.

[0050] After adjusting the pH, the solution was left to stand in an air bath at 40°C for 8 hours, and then left to stand in an air bath at 60°C for 12 hours. Then, wate...

Embodiment 2 2

[0055] The synthesis of embodiment 2 silica F

[0056] Weigh 195g of colloidal silica (average primary particle diameter is 35nm, average secondary particle diameter is 68nm), dissolve in a certain amount of aqueous solution to form a colloidal silica aqueous solution with a mass concentration of 19.5%. Separately, 0.63 mmol (0.65 g) of octachloropropyl-POSS (CAS: 161678-38-2) was weighed and dissolved in 50 g of methanol.

[0057] The aqueous colloidal silica solution was added dropwise at a rate of 1 mL / min to the methanol solution of the above-mentioned silane coupling agent while stirring the aqueous colloidal silica solution at 25° C. under an air atmosphere at a stirring blade rotation speed of 600 rpm. After the dropwise addition, the pH is adjusted with a pH regulator (KOH) so that the pH of the solution is 8.0 to 9.0.

[0058] After adjusting the pH, the solution was left to stand in an air bath at 40°C for 8 hours, and then left to stand in an air bath at 60°C for 1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses application of surface-modified silicon dioxide as abrasive particles. The invention provides an application of surface-modified silicon dioxide as abrasive particles, and the application is characterized in that the surface-modified silicon dioxide is prepared by the following preparation method: in a solvent, reacting silicon dioxide with a silane coupling agent to obtain surface-modified silicon dioxide; the silane coupling agent is octa-aminophenyl-POSS and / or octa-chloropropyl-POSS. The surface-modified silicon dioxide can greatly improve the grinding selectivity of polycrystalline silicon relative to silicon nitride, improve the grinding rate of a Si-containing material and remarkably improve the grinding rate of ruthenium.

Description

technical field [0001] The invention relates to the use of surface-modified silica as abrasive grains. Background technique [0002] In recent years, along with the high integration and high performance of LSI (Large Scale Integration), new microfabrication technology is being developed. The chemical mechanical polishing (CMP) method is also one of them. It is the planarization of the interlayer insulating film, the formation of metal plugs (plugs), and the embedding process in the LSI manufacturing process, especially in the multilayer wiring formation process. A technique frequently used in formation of wiring (damascene wiring). This technique is disclosed, for example, in Patent Document 1 (US Patent No. 4,944,836). [0003] In recent years, CMP has been gradually applied to various steps in semiconductor manufacturing, and one embodiment thereof includes, for example, application to a gate formation step in transistor manufacturing. [0004] When manufacturing transi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09K3/14
Inventor 王溯蒋闯马丽孙涛章玲然秦长春张德贺寇浩东
Owner 上海晖研材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com