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Surface-modified silicon dioxide and abrasive composition containing same

A technology of silicon dioxide and surface modification, applied in other chemical processes, chemical instruments and methods, etc., can solve the problems such as the inability to fully control the grinding rate of Si-containing materials, so as to improve the grinding selectivity, improve the grinding rate, improve the Effect of Grinding Rate

Inactive Publication Date: 2021-04-20
上海晖研材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is that the existing abrasive compositions cannot adequately control the grinding rate of Si-containing materials. For this reason, the present invention provides a surface-modified silicon dioxide and an abrasive composition containing it, The surface-modified silica has a better grinding rate for Si-containing materials

Method used

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  • Surface-modified silicon dioxide and abrasive composition containing same
  • Surface-modified silicon dioxide and abrasive composition containing same
  • Surface-modified silicon dioxide and abrasive composition containing same

Examples

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Embodiment 1 2

[0070] The synthesis of embodiment 1 silica D

[0071] Weigh 195g of colloidal silicon dioxide (average primary particle size is 35nm, average secondary particle size is 68nm), dissolve in a certain amount of water to form a colloidal silicon dioxide aqueous solution with a mass concentration of 19.5%. Separately, 0.63 mmol (0.73 g) of octaaminophenyl-POSS (CAS: 518359-82-5) was weighed and dissolved in 50 g of methanol.

[0072] The aqueous colloidal silica solution was added dropwise at a rate of 1 mL / min to the methanol solution of the above-mentioned silane coupling agent while stirring the aqueous colloidal silica solution at 25° C. under an air atmosphere at a stirring blade rotation speed of 600 rpm. After the dropwise addition, the pH was adjusted with KOH so that the pH of the solution was 8.0-9.0.

[0073] After adjusting the pH, the solution was left to stand in an air bath at 40°C for 8 hours, and then left to stand in an air bath at 60°C for 12 hours. Then, wate...

Embodiment 2 2

[0078] The synthesis of embodiment 2 silica F

[0079] Weigh 195g of colloidal silica (average primary particle diameter is 35nm, average secondary particle diameter is 68nm), dissolve in a certain amount of aqueous solution to form a colloidal silica aqueous solution with a mass concentration of 19.5%. Separately, 0.63 mmol (0.65 g) of octachloropropyl-POSS (CAS: 161678-38-2) was weighed and dissolved in 50 g of methanol.

[0080] The aqueous colloidal silica solution was added dropwise at a rate of 1 mL / min to the methanol solution of the above-mentioned silane coupling agent while stirring the aqueous colloidal silica solution at 25° C. under an air atmosphere at a stirring blade rotation speed of 600 rpm. After the dropwise addition, the pH is adjusted with a pH regulator (KOH) so that the pH of the solution is 8.0 to 9.0.

[0081] After adjusting the pH, the solution was left to stand in an air bath at 40°C for 8 hours, and then left to stand in an air bath at 60°C for 1...

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Abstract

The invention discloses surface-modified silicon dioxide and an abrasive composition containing the same. The invention provides surface-modified silicon dioxide, and the silicon dioxide is characterized in that the silicon dioxide is prepared by the following preparation method: in a solvent, enabling silicon dioxide to react with a silane coupling agent to obtain surface-modified silicon dioxide, wherein the silane coupling agent is octa-aminophenyl-POSS and / or octa-chloropropyl-POSS. The surface-modified silicon dioxide can greatly improve the grinding selectivity of polycrystalline silicon relative to silicon nitride, improve the grinding rate of a Si-containing material and remarkably improve the grinding rate of ruthenium.

Description

technical field [0001] The invention relates to a surface-modified silicon dioxide and an abrasive composition containing it. Background technique [0002] In recent years, along with the high integration and high performance of LSI (Large Scale Integration), new microfabrication technology is being developed. The chemical mechanical polishing (CMP) method is also one of them. It is the planarization of the interlayer insulating film, the formation of metal plugs (plugs), and the embedding process in the LSI manufacturing process, especially in the multilayer wiring formation process. A technique frequently used in formation of wiring (damascene wiring). This technique is disclosed, for example, in Patent Document 1 (US Patent No. 4,944,836). [0003] In recent years, CMP has been gradually applied to various steps in semiconductor manufacturing, and one embodiment thereof includes, for example, application to a gate formation step in transistor manufacturing. [0004] Wh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14
Inventor 王溯蒋闯马丽秦长春章玲然孙涛张德贺寇浩东
Owner 上海晖研材料科技有限公司
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