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Polishing agent for silicon oxide, liquid additive, and method of polishing

A technology of abrasives and silicon oxide, applied in chemical instruments and methods, polishing compositions containing abrasives, grinding devices, etc., can solve problems such as excessive metal impurities and excess alkali

Active Publication Date: 2008-11-12
RESONAC CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Colloidal silica was previously produced using water glass as a raw material. However, this method has the problem of excessive alkali contained in water glass, and there are many metal impurities when it is used in semiconductors.

Method used

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  • Polishing agent for silicon oxide, liquid additive, and method of polishing
  • Polishing agent for silicon oxide, liquid additive, and method of polishing
  • Polishing agent for silicon oxide, liquid additive, and method of polishing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0105] The present invention is illustrated below through some examples, but the scope of the present invention is not limited to these examples.

[0106] (production of cerium oxide particles)

[0107] Put 2kg of cerium carbonate hydrate in a platinum container and calcinate in air at 800°C for 2 hours to obtain about 1kg of yellow-white powder. Phase identification of this powder by X-ray diffraction method confirmed that it was cerium oxide. The particle size of the calcined powder is 30-100 μm. When the surface of the calcined powder particles was observed with a scanning electron microscope, grain boundaries of cerium oxide were observed. The primary particle size of cerium oxide surrounding the grain boundaries was measured, and the volume distribution had a median value of 190 nm and a maximum value of 500 nm. After dry pulverization of 1 kg of cerium oxide powder using a jet mill, the pulverized particles were observed with a scanning electron microscope, and it was...

Synthetic example 1

[0115] 280g of deionized water and 20g of 2-propanol were dropped into a 1-liter flask, and the temperature was raised to 90°C while stirring under a nitrogen atmosphere, and then 1g of a polymerization initiator (manufactured by Wako Pure Chemical Industry Co., Ltd., trade name V- 601) was dissolved in 100 g of acryloylmorpholine, and the resulting solution was poured into the flask over 2 hours. Thereafter, it was kept at 90° C. for 5 hours, then cooled and taken out to prepare a water-soluble polymer solution. The concentration of the water-soluble polymer in the solution was 25.3%.

Synthetic example 2

[0117] 50 g of N,N-diethylacrylamide and 50 g of acryloylmorpholine were synthesized by the method of Synthesis Example 1 to prepare a water-soluble polymer solution. The water-soluble polymer concentration in the solution was 25.1%.

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Abstract

A polishing agent for the silicon oxide film on a polysilicon film, which comprises abrasive grains, an abrasion inhibitor for polysilicon, and water. It is preferable that the abrasion inhibitor is (1) a water-soluble polymer having a skeleton made from an N-monosubstituted or N,N-disubstituted derivative of any of acrylamide, methacrylamide and a-substituted derivatives of both, (2) polyethylene glycol, (3) an oxyethylene adduct of an acetylenic diol, (4) a water-soluble organic compound having an acetylenic linkage, (5) an alkoxylated straight-chain aliphatic alcohol, or (6) polyvinylpyrrolidone or a vinyl- pyrrolidone copolymer. The invention provides a polishing agent and a method of polishing which are applied to the production of semiconductors, namely, a polishing agent for silicon oxide which can polish a silicon oxide film on a polysilicon film at a high speed and inhibit the progress of abrasion of the polysilicon film when the polysilicon film becomes exposed; and a method of polishing with the agent.

Description

technical field [0001] The present invention relates to a kind of abrasive, and it is suitable for as the flattening process of substrate surface insulating film as the semiconductor element manufacturing technology, especially relates to a kind of abrasive for silicon oxide on polysilicon, the additive liquid for this abrasive, And a grinding method using the grinding agent. Background technique [0002] In the current ULSI semiconductor element process, research and development of processing technologies that are conducive to high density and miniaturization, one of which, Chemical Mechanical Polishing (CMP: Chemical Mechanical Polishing) technology has become a step in the semiconductor element manufacturing process Necessary technology for planarization of inter-insulation film, formation of shallow trench element isolation layer, formation of plug and buried metal wiring, etc. [0003] Among the chemical mechanical abrasives used in the process of semiconductor element...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B24B37/00C09K3/14
CPCC09G1/02H01L21/31053C09K3/1409C09K3/1463B24B1/00C09K3/14
Inventor 西山雅也深泽正人阿久津利明榎本和宏芦泽寅之助大槻裕人
Owner RESONAC CORPORATION
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