Method for preparing monocrystalline silicon by using czochralski method

A single crystal silicon and Czochralski technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of shortening the growth cycle of single crystal, improve the success rate of necking and the quality of single crystal, reduce The effect of growing crystal dislocations and improving the success rate of necking

Inactive Publication Date: 2018-04-24
XINGTAI JINGLONG ELECTRONICS MATERIAL
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the embodiment of this application provides a method for preparing single crystal silicon by the Czochralski method to solve

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing monocrystalline silicon by using czochralski method
  • Method for preparing monocrystalline silicon by using czochralski method
  • Method for preparing monocrystalline silicon by using czochralski method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In the following description, specific details such as specific system structures and technologies are presented for the purpose of illustration rather than limitation, so as to thoroughly understand the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.

[0031] In order to illustrate the technical solutions described in this application, specific examples are used below to illustrate.

[0032] see figure 1 As shown, an implementation flow chart of the method for preparing monocrystalline silicon by the Czochralski method provided by an embodiment of the present application, as shown in the figure, the method may include the followin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The application belongs to the technical field of production of monocrystalline silicon and particularly relates to a method for preparing the monocrystalline silicon by using a czochralski method. The method comprises the following steps: after a silicon material is melt in a single crystal furnace, heating power of the single crystal furnace decreases rapidly; after a temperature controller controls the temperature in the single crystal furnace to be stabilized, a seed crystal makes contact with the liquid level and then necking is carried out; after necking reaches a certain height, dislocation-free shouldering is performed and a crystal grows; the heating power of the single crystal furnace is gradually reduced step-by-step and shoulder rotation is started to perform when the crystal grows to reach the target diameter. By using the method, the growth cycle of the single crystal can be shortened by about 100 minutes and the success rate of necking is improved by 40 to 50 percent. Inaddition, the method has the advantages that necking temperature can be quickly found out, dislocation of the grown crystal is reduced, the growth cycle of single crystal is shortened and the contacttime between the silicon material and a quartz crucible is reduced, so that influence of silicon impurities is reduced as well as the success rate of necking and the quality of the single crystal areimproved.

Description

technical field [0001] The application belongs to the technical field of monocrystalline silicon production, and in particular relates to a method for preparing monocrystalline silicon by the Czochralski method. Background technique [0002] The production process of monocrystalline silicon includes the following procedures: furnace dismantling - charging - melting material - necking - shoulder setting - shoulder turning - equal diameter - finishing - shutdown. Among them, the necking and shouldering are the process of pulling the single crystal growth with the seed crystal at a temperature suitable for single crystal growth by reducing the heating power of the single crystal furnace after the silicon material is melted. When the seed crystal contacts the liquid surface, a bit It is necessary to introduce thin necks to eliminate dislocations. The temperature in the single crystal furnace is appropriate, and the thin necks can be used to arrange dislocations and start crystal...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B15/20C30B29/06
CPCC30B15/20C30B29/06
Inventor 王会敏张浩强颜超范晓甫赵龙张振国霍永超杜瑞豹杨乐天
Owner XINGTAI JINGLONG ELECTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap