DSP processor data memory active fault tolerance method and device

A data storage and processor technology, applied in the field of microelectronics, can solve problems such as instruction waste, memory error accumulation effect, and adverse DSP processor performance.

Active Publication Date: 2020-10-30
XIAN MICROELECTRONICS TECH INST
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

Simply flushing the pipeline will "waste" instructions already in the pipeline
[0005] Most DSP processors have only one level memory structure, such as "MSC8102Technical Data" released by Freescale in 2005, "TriMedia TM-1300" released by Philips in 2000, "TMS320C6000 CPU and Instruction Set Reference" released by Texas Instruments in 2000 Guide”, which does not update and write back the data memory in time, which will lead to the cumulative effect of memory errors
If in order to avoid error events, disable the on-chip first-level storage and fetch data from the external memory, although the correct data can be obtained, it will cause a large memory access delay, which is not conducive to the performance of the DSP processor.

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  • DSP processor data memory active fault tolerance method and device
  • DSP processor data memory active fault tolerance method and device
  • DSP processor data memory active fault tolerance method and device

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Embodiment Construction

[0074] The present invention will be further described in detail below in conjunction with specific embodiments, which are explanations of the present invention rather than limitations.

[0075] The DSP processor data memory fault-tolerant device and method provided by the invention are oriented to the field of highly reliable processor design, and provide hardware structural support and software solutions for application-oriented processor reliability design.

[0076] The active fault-tolerant device of the DSP processor data memory of the present invention is a circuit arranged between the core pipeline of the DSP processor and the data memory in the core and used for active fault-tolerant refresh of the data memory. The active fault-tolerant device includes the following circuit modules: LOAD instruction decoding for loading data storage, STORE instruction decoding for writing data storage, queue access module, queue access write-back instruction decoding module (RSEC instru...

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Abstract

The invention provides a DSP data memory active fault-tolerant method and device. The device is arranged between a DSP core assembly line and an intra-core data memory and is used for active fault-tolerant refreshing of the data memory. The device comprises a LOAD instruction code used for loading the data memory, a STORE instruction code for writing the data memory, a queue access module, an RSECinstruction decoding module, the data memory, a data error correction and detection, a universal register file, a correctable error state register, a circulating Record queue, a data memory writing operation module and an interrupt processing module used for hardware interrupt. The frequency performance of a DSP is basically not influenced through proper assembly line partitioning. According to the method and device, the fault-tolerant processing strategy and time of hardware can be flexibly controlled, the requirement for system reliability is met at a relatively low cost, and the executionefficiency of the DSP under an error abnormal condition is ensured.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a highly reliable and high-performance processor fault-tolerant structure, in particular to a DSP processor data memory active fault-tolerant method and device. Background technique [0002] Memory is the most sensitive part of a modern processor. Especially with the continuous improvement of the semiconductor manufacturing process, the feature size of the integrated circuit is shrinking sharply. On the one hand, the ever-decreasing power supply voltage, ever-increasing operating frequency, ever-decreasing node capacitance, and rapidly increasing chip transistor capacity in nano-integrated circuits make memory cells more and more sensitive to the working environment. When the memory circuit is impacted by high-energy particles, power supply noise, electromagnetic influence or cosmic rays, the content stored in the memory unit of the chip will be destroyed transiently or pe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/07G06F9/38
CPCG06F9/3861G06F11/0793
Inventor 曹辉何卫强于飞
Owner XIAN MICROELECTRONICS TECH INST
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