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DSP data memory active fault-tolerant method and device

A data memory and processor technology, applied in the field of microelectronics, can solve the problems of memory error accumulation effect, large memory access delay, instruction waste, etc.

Active Publication Date: 2018-05-04
XIAN MICROELECTRONICS TECH INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Simply flushing the pipeline will "waste" instructions already in the pipeline
[0005] Most DSP processors have only one level memory structure, such as "MSC8102Technical Data" released by Freescale in 2005, "TriMedia TM-1300" released by Philips in 2000, and "TMS320C6000 CPU and Instruction Set ReferenceGuide" released by Texas Instruments in 2000 , which does not update and write back the data memory in time, which will lead to the cumulative effect of memory errors
If in order to avoid error events, disable the first-level storage on the chip and fetch data from the external memory, although the correct data can be obtained, it will cause a large memory access delay, which is not conducive to the performance of the DSP processor

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Embodiment Construction

[0074] The present invention will be further described in detail below in conjunction with specific embodiments, which are to explain but not limit the present invention.

[0075] The DSP processor data memory fault tolerance device and method provided by the present invention are oriented to the field of high-reliability processor design, and provide hardware structural support and software solution methods for application-oriented processor reliability design.

[0076] The DSP processor data memory active fault-tolerant device of the present invention is a circuit arranged between the DSP processor core pipeline and the data memory in the core and used for the active fault-tolerant refresh of the data memory. The active fault-tolerant device includes the following circuit modules: LOAD instruction decoding for loading data memory, STORE instruction decoding for writing data memory, queue access module, queue access write-back instruction decoding module (RSEC instruction decoding ...

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Abstract

The invention provides a DSP data memory active fault-tolerant method and device. The device is arranged between a DSP core assembly line and an intra-core data memory and is used for active fault-tolerant refreshing of the data memory. The device comprises a LOAD instruction code used for loading the data memory, a STORE instruction code for writing the data memory, a queue access module, an RSECinstruction decoding module, the data memory, a data error correction and detection, a universal register file, a correctable error state register, a circulating Record queue, a data memory writing operation module and an interrupt processing module used for hardware interrupt. The frequency performance of a DSP is basically not influenced through proper assembly line partitioning. According to the method and device, the fault-tolerant processing strategy and time of hardware can be flexibly controlled, the requirement for system reliability is met at a relatively low cost, and the executionefficiency of the DSP under an error abnormal condition is ensured.

Description

Technical field [0001] The invention belongs to the field of microelectronics technology, relates to a high-reliability, high-performance processor fault-tolerant structure, and is specifically a DSP processor data memory active fault-tolerant method and device. Background technique [0002] Memory is the most sensitive component in modern processors. Especially with the continuous progress of semiconductor manufacturing processes, the feature size of integrated circuits has shrunk dramatically. On the one hand, the ever-decreasing power supply voltage, the ever-increasing operating frequency, the ever-decreasing node capacitance and the rapidly increasing chip transistor capacity in nano-integrated circuits make the memory cells more and more sensitive to the working environment. When the memory circuit is impacted by high-energy particles, power supply noise, electromagnetic influence or cosmic rays, the content stored in the memory cell of the chip is transiently or permanent...

Claims

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Application Information

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IPC IPC(8): G06F11/07G06F9/38
CPCG06F9/3861G06F11/0793
Inventor 曹辉何卫强于飞
Owner XIAN MICROELECTRONICS TECH INST
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