A method of regulating damping factor of mram material
A damping factor and material damping technology, applied in data recording, instrumentation, magnetic recording, etc., can solve the problems of complex MRAM device structure and fabrication process, unfavorable for integrated device fabrication, etc., to achieve low power consumption, high thermal stability, high-speed MRAM The effect of reading and writing
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[0026] In order to achieve the above object, the present invention first prepared the material structure substrate / Ta(5) / CoFeB(1) / MgO(3) / Ta(5) and substrate / Ta(5) / MgO(3) / CoFeB(1) / Ta(5) (the number represents the thickness of the film, the unit is nanometers), such as figure 1 shown. The magnetic film structure has perpendicular magnetic anisotropy, coercive force H c 5.31Oe and 5.66Oe respectively, the saturation magnetization field M s 890emu / cm 3 、836emu / cm 3 ,like figure 2 shown.
[0027] The samples involved in the present invention are grown by magnetron sputtering. First, the surface of the Si substrate is cleaned by blowing the surface of the substrate with a nitrogen stream. The vacuum was maintained at 10 when the sample was sputtered -6 Pa or so.
[0028] In order to complete the above invention, the experimental scheme we adopt is to use the time-resolved magneto-optical Kerr effect means, using such image 3 The experimental system shown.
[0029] The ...
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