GaN-based yellow-light LED structure

Abstract

The invention discloses a GaN-based yellow-light LED structure. The GaN-based yellow-light LED structure comprises a chip component and a light emitting diode component, the chip component comprises asilicon carbide substrate, an epitaxial layer growing on the silicon carbide substrate, and a P electrode and an N electrode arranged on the epitaxial layer, the epitaxial layer comprise an InN buffer layer, an AlGaN buffer layer, a non-intentionally doped GaN contact layer, an N-type doped GaN contact layer, an InGaN preparation layer, a yellow-light multi-quantum well layer, an electron blocking layer, a P-type doped GaN contact layer, and a transparent conducting layer stacked in sequence, the N electrode is arranged on the N-type doped GaN contact layer, the P electrode is arranged on thetransparent conducting layer, the InGaN preparation layer and the yellow-light multi-quantum well layer both include an inverted cone structure, and the light emitting diode component comprises a support used for fixing the chip component, a welding wire and a support electrode. According to the GaN-based yellow-light LED structure, phenomena of cracking and fragmentation can be avoided, and theuniformity is improved.

Description

technical field [0001] The invention relates to the technical field of lighting, in particular to a GaN-based yellow LED structure. Background technique [0002] In recent years, nitride-based light-emitting diode chips have been widely used in the lighting field. With the large-scale application of light-emitting diodes, the market has put forward higher requirements for the production efficiency and production cost of light-emitting diodes. Therefore, in order to continuously reduce manufacturing costs, it is a future development to use light-emitting diodes with silicon carbide substrates instead of light-emitting diodes with sapphire substrates. trend. [0003] At present, light-emitting diodes using silicon carbide substrates can increase the substrate size, but due to the immaturity of 6-inch and larger epitaxy technology, light-emitting diodes on silicon carbide substrates have not yet been fully popularized. Epitaxial wafers are prone to cracks and fragments during...

AI Technical Summary

Problems solved by technology

[0003] At present, light-emitting diodes using silicon carbide substrates can increase the substrate size, but due to the immaturity of 6-inch and larger epitaxy technology, light-emitting diodes on silicon carbide substrates have not yet been fully popularized. Epitaxial wafers are prone to cracks and fragments during the growth process, and the uniformity of the epitaxial wafers is poor, resulting in low product yields of epitaxial wafers and difficulty in large-scale production

Images