Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thianthrene oxide-based yttrium complex phosphorescent luminescent materials and preparation methods thereof

A phosphorescent luminescent material, thianthrene oxide technology, applied in luminescent materials, indium organic compounds, platinum group organic compounds, etc., can solve the problems of weak electron injection and transmission capabilities and low quantum efficiency, and achieve enhanced electron injection and transmission capabilities, The effect of increasing the value of the application

Active Publication Date: 2018-05-18
山西绿普光电新材料科技有限公司
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the deficiencies of existing luminescent materials such as low quantum efficiency and weak electron injection and transport capabilities, the object of the present invention is to provide a phosphorescent luminescent material based on thianthrene oxide-based iridium complexes and a preparation method thereof. The material has both high quantum efficiency and electron injection and transport capabilities

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thianthrene oxide-based yttrium complex phosphorescent luminescent materials and preparation methods thereof
  • Thianthrene oxide-based yttrium complex phosphorescent luminescent materials and preparation methods thereof
  • Thianthrene oxide-based yttrium complex phosphorescent luminescent materials and preparation methods thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The organometallic iridium complex phosphorescent material Ir1 of the present embodiment has a chemical formula of C 39 h 27 IrN 2 o 10 S 4 , the molecular structure formula is:

[0028]

[0029] Refer to attached figure 1 , the synthesis steps are as follows:

[0030] The first step: 0.78mmol organic ligand Put 0.39mmol iridium trichloride into the reaction vessel, add 30mL of a mixed solvent of ethylene glycol ether and water in a nitrogen atmosphere, the volume ratio of ethylene glycol ether and water in the mixed solvent is 3:1, and heat to 110 in a nitrogen atmosphere ℃, stirred for 12 hours and then cooled to room temperature, resulting in precipitation;

[0031] Step 2: Add 50 mL of deionized water to the final reaction mixture in Step 1 to generate a precipitate, which is obtained by suction filtration and dried in a vacuum oven. Then the precipitate was mixed with 3.9mmol acetylacetone and 7.8mmol anhydrous sodium carbonate, 20mL of ethylene glycol ...

Embodiment 2

[0035] The organometallic iridium complex phosphorescent material Ir2 of the present embodiment has a chemical formula of C 41 h 32 IrN 3 o 6 S 2 , the molecular structure formula is:

[0036]

[0037] Refer to attached figure 2 , the synthesis steps are as follows:

[0038] The first step: 0.24mmol organic ligand With 0.24mmol organic ligand And 0.24mmol iridium trichloride is put into the reaction vessel, add the mixed solvent of 30mL ethylene glycol ether and water in nitrogen atmosphere, the volume ratio of ethylene glycol ether and water in the mixed solvent is 3:1, heat to 110 in nitrogen atmosphere ℃, stirred for 12 hours and then cooled to room temperature, resulting in precipitation;

[0039]Step 2: Add 50 mL of deionized water to the final reaction mixture in Step 1 to generate a precipitate, which is obtained by suction filtration and dried in a vacuum oven. Then the precipitate was mixed with 2.4 mmol acetylacetone and 4.8 mmol anhydrous sodium carbo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses thianthrene oxide-based yttrium complex phosphorescent luminescent materials and preparation methods thereof. The thianthrene oxide-based yttrium complex phosphorescent luminescent materials have general structural formulas shown in the description. The preparation methods comprise that an organic ligand containing a strong electron-withdrawing thianthrene oxide functionalgroup or other organic ligands and antimony trichloride undergo a reaction to produce a high electron injection transmission iridium complex phosphorescent material with phosphorescence quantum efficiency of 95% or more. The yttrium complex phosphorescent luminescent materials solve the problem that the traditional luminescent material has low phosphorescence quantum efficiency and weak electron injection transmission ability, and have an important application value in preparation of high performance organic light emitting diodes.

Description

technical field [0001] The invention relates to the field of organic light-emitting materials, in particular to an iridium complex phosphorescent light-emitting material based on thianthrene oxide and a preparation method thereof. Background technique [0002] Organic light-emitting materials are currently widely used in the fields of new ion detection, ultraviolet detection, cell imaging, and organic light-emitting diodes. Especially in the field of organic light-emitting diodes, which is known as the next-generation display and lighting technology, organic light-emitting materials play a central role. It not only determines the light-emitting color of organic light-emitting diodes, but also largely affects the luminous efficiency of organic light-emitting diodes. High-performance organic light-emitting materials must at least have high quantum efficiency and excellent carrier injection and transport properties. Limited by self-selection, the organic light-emitting diodes ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07F15/00C09K11/06
CPCC07F15/0033C09K11/06C09K2211/1029C09K2211/1092C09K2211/185
Inventor 周桂江孙源慧杨晓龙
Owner 山西绿普光电新材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com