Nano-floating-gate-based organic field effect transistor memory and preparation method thereof

Abstract

The invention relates to a nano-floating-gate-based organic field effect transistor memory. The nano-floating-gate-based organic field effect transistor memory is a floating gate-tunneling layer integrated device structure. The nano-floating-gate-based organic field effect transistor memory includes source-drain electrodes, a semiconductor layer, a floating gate-tunneling layer and a gate insulating layer; and a floating gate layer and a tunneling layer together form a charge storage layer. The present invention aims to form a nanostructure by using a simple solution suspension coating processto avoid the application of complicated nanotechnology to prepare a thin film. The nano-floating-gate-based organic field effect transistor memory of the invention has the advantages of large storagewindow, high switching ratio (10<5>), high stability and repeated erase resistance and lower cost, and can realize optical erasure so as to facilitate information encryption and can be commercially popularized and produced in a large scale.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory, and in particular relates to a naphthalene ring small molecule nanometer floating gate organic field effect transistor memory and a preparation method thereof. Background technique [0002] With the advent of the era of big data, in the face of massive information processing and storage, it is required to develop large-capacity, high-density, high-speed non-volatile memory. Compared with traditional inorganic semiconductor memory devices, memory based on organic semiconductors has incomparable advantages. Conventional inorganic semiconductors do not have advantages due to the wide range of sources of organic materials, solution processing, low cost, large-area low-temperature preparation, and integration with flexible substrates. Organic field-effect transistors have the advantages of non-destructive reading and easy logic circuit integration, which are suitable for the development ...

AI Technical Summary

Problems solved by technology

[0006] In view of the technical problems existing in the existing organic field effect transistors, the present invention proposes a co-suspension coating of an easily soluble small molecule material with excellent charge trapping ability and a hydrophobic high dielectric constant compound polystyrene (PS) into a A small molecule nano-floating gate organic field-effect transistor memory, which solves the problems of low storage density and complex process of general nano-floating gates, and the manufacturing process is simple and can be precisely controlled, which effectively promotes the application range of small molecule materials in storage

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