A memory based on nanometer floating gate organic field effect transistor and its preparation method
A memory and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of low storage density and complex process, and achieve the effects of simplifying the manufacturing process, reducing costs, and facilitating information encryption
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[0037] The structure diagram of the organic field effect transistor memory involved in the specific embodiment of the present invention is as follows: figure 1 As shown, an OFET memory with a small molecular nanofilm as a charge trapping layer includes a substrate, a gate electrode formed on the substrate, and a gate insulating layer covering the gate electrode from bottom to top. The small molecule naphthalene ring nanometer floating gate layer on the gate insulating layer, the semiconductor layer formed on the floating gate layer and the source and drain electrodes formed on both sides of the channel region on the upper surface of the semiconductor layer.
[0038] In the technical scheme of the embodiment of the present invention, n-type heavily doped silicon is used as the grid; thermally evaporate 300nm thick SiO on it 2 As a gate insulating layer; the charge trapping layer is made of 5-methoxy 1,2,3,4-tetraphenylnaphthalene (5-MOT) and polystyrene (PS) at a molar ratio of...
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