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A memory based on nanometer floating gate organic field effect transistor and its preparation method

A memory and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of low storage density and complex process, and achieve the effects of simplifying the manufacturing process, reducing costs, and facilitating information encryption

Active Publication Date: 2021-02-23
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the technical problems existing in the existing organic field effect transistors, the present invention proposes a co-suspension coating of an easily soluble small molecule material with excellent charge trapping ability and a hydrophobic high dielectric constant compound polystyrene (PS) into a A small molecule nano-floating gate organic field-effect transistor memory, which solves the problems of low storage density and complex process of general nano-floating gates, and the manufacturing process is simple and can be precisely controlled, which effectively promotes the application range of small molecule materials in storage

Method used

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  • A memory based on nanometer floating gate organic field effect transistor and its preparation method
  • A memory based on nanometer floating gate organic field effect transistor and its preparation method
  • A memory based on nanometer floating gate organic field effect transistor and its preparation method

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Embodiment 1

[0037] The structure diagram of the organic field effect transistor memory involved in the specific embodiment of the present invention is as follows: figure 1 As shown, an OFET memory with a small molecular nanofilm as a charge trapping layer includes a substrate, a gate electrode formed on the substrate, and a gate insulating layer covering the gate electrode from bottom to top. The small molecule naphthalene ring nanometer floating gate layer on the gate insulating layer, the semiconductor layer formed on the floating gate layer and the source and drain electrodes formed on both sides of the channel region on the upper surface of the semiconductor layer.

[0038] In the technical scheme of the embodiment of the present invention, n-type heavily doped silicon is used as the grid; thermally evaporate 300nm thick SiO on it 2 As a gate insulating layer; the charge trapping layer is made of 5-methoxy 1,2,3,4-tetraphenylnaphthalene (5-MOT) and polystyrene (PS) at a molar ratio of...

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Abstract

The invention is an organic field effect transistor memory based on small organic molecules, and has a device structure through the integration of a floating gate-tunneling layer. From top to bottom, the entire device is: source-drain electrodes, semiconductor layers, floating gate-tunneling layers, and gate insulating layers, wherein the floating gate layer and the tunneling layer together constitute the charge storage layer. The present invention aims to form a nanostructure through a simple solution suspension coating process, avoiding complex nanotechnology to prepare thin films, and realizing a larger storage window and a switch ratio (10 5 ), has good stability and repeated erasing and writing resistance, realizes optical erasing, is beneficial to information encryption, and is low in cost and can be commercially promoted and produced in a large area.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory, and in particular relates to a naphthalene ring small molecule nanometer floating gate organic field effect transistor memory and a preparation method thereof. Background technique [0002] With the advent of the era of big data, in the face of massive information processing and storage, it is required to develop large-capacity, high-density, high-speed non-volatile memory. Compared with traditional inorganic semiconductor memory devices, memory based on organic semiconductors has incomparable advantages. Conventional inorganic semiconductors do not have advantages due to the wide range of sources of organic materials, solution processing, low cost, large-area low-temperature preparation, and integration with flexible substrates. Organic field-effect transistors have the advantages of non-destructive reading and easy logic circuit integration, which are suitable for the development ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11517H01L27/28H01L51/05H01L51/30H10B41/00
CPCH10B41/00H10K19/10H10K85/60H10K10/462H10K10/466
Inventor 宋娟徐新水钱妍仪明东谢令海黄维
Owner NANJING UNIV OF POSTS & TELECOMM
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