Radio frequency transistor and its manufacturing method

Abstract

The invention relates to a radio frequency triode and manufacturing method thereof. The manufacturing method includes providing a silicon substrate on which an N type epitaxial layer, a silicon dioxide layer and a field oxidization layer having a sharp angle are formed; forming another silicon dioxide layer again on the surface of the N type epitaxial layer, the another silicon dioxide layer beingconnected to the field oxidization layers of two ends of the N type epitaxial layer; performing P type ion implantation for the first time, thereby forming a first P type lightly-doped area on the surface of the N type epitaxial layer under the another silicon dioxide layer; performing P type ion implantation for the second time, thereby forming second P type lightly-doped areas in the central area of the first P type lightly-doped area and the surface of the N type epitaxial layer surface at the lower side; performing P type ion implantation for the third time, thereby forming a P type heavily-doped area on the surface of the second P type lightly-doped area; and further forming a medium layer, a first through hole, an type area, a second through hole, a first metal part and a second metal part.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular, to a radio frequency triode and a manufacturing method thereof. 【Background technique】 [0002] In the process of forming the field oxide layer of the existing radio frequency triode, some defects are often generated at the sharp corners of the field oxide layer. These defects are generated during the etching process of the silicon nitride layer and subsequent oxidation of the field oxide layer. These defects will cause the breakdown voltage of the relevant PN junction at this position to be unstable. When the P-region (P-type low-doped region) is implanted, a layer of photolithography is required to keep the P-region away from the sharp corner of the field oxide layer and avoid defects at the sharp corner of the field oxide layer, so that One more layer of photolithography is more expensive. In addition, because the curvature at the breakdown is...

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Problems solved by technology

[0003] Aiming at the problems of the existing radio frequency triode manufacturing process and device structure, the present invention proposes a new radio frequency triode and its manufacturing method, which solves at least one of the above technical problems without increasing excessive manufacturing costs

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