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A process treatment method for improving the yield rate of long-term storage semiconductor silicon wafer products

A technology for long-term storage and processing methods, which is applied in the field of process processing to improve the yield of long-term storage semiconductor silicon wafer products, can solve problems such as changes in electrical parameters and decline in product yield, and achieve low cost, simple implementation, and maintain high yield. Effect

Active Publication Date: 2020-06-02
GUIZHOU UNIV
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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a process treatment method for improving the yield rate of long-term storage semiconductor silicon wafer products, so as to solve the problems in the prior art that the semiconductor device silicon wafers after storage and transportation are caused by water vapor and particles in the storage and transportation process. , stress, etc. caused by changes in electrical parameters, product yield decline

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  • A process treatment method for improving the yield rate of long-term storage semiconductor silicon wafer products

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Embodiment Construction

[0022] A process treatment method for improving the yield rate of long-term storage semiconductor silicon wafer products, comprising:

[0023] Step 1, spraying and soaking: Spray and soak the stored semiconductor silicon wafers; the method of spraying and soaking in step 1 is: use a cleaning tank with a spray function to spray the semiconductor silicon wafers until The semiconductor silicon wafer is completely submerged by the spraying liquid, and the spraying liquid is deionized water; soaking means soaking the semiconductor silicon wafer in a cleaning tank with deionized water, and the soaking time is 5 minutes. Make the semiconductor silicon wafer fully wet.

[0024] Step 2, boil the No. 1 liquid: use the mixed solution of ammonia water, hydrogen peroxide and deionized water to clean the soaked semiconductor silicon wafer; the method of boiling the No. 1 liquid described in step 2 is: use ammonia water (NH 4 OH), hydrogen peroxide (H 2 o 2 ) and deionized water (H 2 O) ...

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Abstract

The invention discloses a technological processing method for enhancing the yield of a long-term storage semiconductor wafer product. The method comprises steps: 1, spraying and soaking are carried out: a semiconductor wafer after storage is subjected to spraying and soaking; 2, first liquid is boiled: a mixed solution of ammonia, hydrogen peroxide and deionized water is used to clean the semiconductor wafer after soaking; 3, washing is carried out: the semiconductor wafer after the second step is subjected to washing; 4, spin drying is carried out; the semiconductor wafer after washing is subjected to spin drying; and 5, drying is carried out: the semiconductor wafer after spin drying is subjected to drying processing. Problems such as electrical parameter changes and product yield decline caused by water vapor, particles and stress during storage and transportation processes of the semiconductor device wafers after storage and transportation in the prior art can be solved.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuits and devices, in particular to a process treatment method for improving the yield rate of long-term storage semiconductor silicon wafer products. Background technique [0002] Semiconductor devices (integrated circuits and discrete devices) are devices with certain vertical and lateral structures formed on silicon wafers using basic semiconductor processes such as oxidation, photolithography, etching, doping, annealing, and deposition. There are differences in process details, and the functions reflected under the applied bias voltage are also different. As the carrier of semiconductor devices, semiconductor silicon wafers need to be stored after the semiconductor process is completed. Due to differences in storage temperature, protective gas, storage time, and device environmental sensitivity, the electrical parameters of semiconductor devices will vary after a period of storage. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02008H01L21/02041
Inventor 唐昭焕杨发顺马奎林洁馨傅兴华
Owner GUIZHOU UNIV
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