Thermal-insensitive laser based on SOI structure

Abstract

The invention discloses a thermal-insensitive laser based on an SOI structure, which comprises an SOI structure, a first reflection structure, a second reflection structure, a laser emission device and a negative temperature coefficient waveguide, wherein the first reflection structure and the second reflection structure are located on the SOI structure and arranged in a corresponding manner, thelaser emission device and the negative temperature coefficient waveguide are located between the first reflection structure and the second reflection structure on the SOI structure, the SOI structurecomprises a silicon substrate located at the bottom layer, an insulating layer located at the middle and silicon located at the top layer, the silicon at the top layer forms a silicon waveguide between the laser emission device and the negative temperature coefficient waveguide, at least one side of the negative temperature coefficient waveguide is provided with a silicon dioxide waveguide, the laser emission device serves as an active region of the laser, and the negative temperature coefficient waveguide is used for performing compensation on positive refractive index variations of the laserso as to enable the wavelength of the light to be stabilized within a preset range. The laser disclosed by the invention has a characteristic of thermal insensitivity, compensation is performed through the negative temperature coefficient waveguide, the refractive index of the whole laser can be adjusted to keep constant at different temperatures, and the output wavelength of the laser remains unchanged.

Description

technical field [0001] The application belongs to the technical field of lasers, and in particular relates to a thermally insensitive laser based on an SOI structure. Background technique [0002] With the development of high-speed and wide-bandwidth, the wavelength interval of WDM (Wavelength Division Multiplexing, wavelength division multiplexing) is required to be smaller and smaller, especially after the rate reaches 100Gbps, WDM requires the wavelength to change within a very small range, such as The LWDM (L-band WDM) communication window requires that the wavelength must be changed in the range of 2nm, and the optical module has to use TEC (Thermo Electric Cooler, semiconductor cooler) to control the temperature of core components such as lasers. In this way, temperature control elements such as TEC and thermistor must be added to the same packaging method such as QSFP and CFP, which brings great inconvenience to the packaging, and the existence of TEC also increases t...

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Problems solved by technology

In this way, temperature control elements such as TEC and thermistor must be added to the same packaging method such as QSFP and CFP, which brings great inconvenience to the packaging, and the existence of TEC also increases the power consumption of the entire module

[0003] The change rate of the wavelength of the traditional DFB laser with temperature is 0.09nm / °C. In the high-speed optical module, the range of wavelength limitation is very narrow. If the temperature control device is not added, the wavelength of the DFB laser will drift out of the working area during operation, resulting in module failure

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