A kind of Gan-based hemt device and preparation method thereof
A device and barrier layer technology, applied in the field of GaN-based HEMT devices and their preparation, can solve the problems of restricting the industrialization and application of GaN-based HEMT devices, large losses, etc., to increase the turn-on voltage, improve the consistency, and improve the breakdown. The effect of voltage
Active Publication Date: 2020-09-04
WAYTHON INTELLIGENT TECH SUZHOU CO LTD
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The F ion implantation technology in the gate electrode region also has the disadvantage of large loss in the channel, which limits the industrialization and application of GaN-based HEMT devices
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0046] The technical solution of the present invention will be further described below in conjunction with the accompanying drawings.
[0047] see figure 1 As shown, the above-mentioned GaN-based HEMT device includes sequentially stacked from bottom to top:
[0048] Substrate layer 1, aluminum nitride buffer layer 2, gallium nitride channel layer 3, Al(ln, Ga, Sc)N barrier layer 4, silicon nitride passivation layer 5.
[0049]The GaN-based HEMT device also includes: a P-type channel region 6 arranged in the gallium nitride channel layer 3 and the Al(ln, Ga, Sc)N barrier layer 4; The P-type diffusion region 7 in the N barrier layer 4; the source electrode 8 and the drain electrode 9 arranged on the upper surface of the Al(ln, Ga, Sc)N barrier layer 4; The gate electrode 10 on the upper surface of the barrier layer 4 is located above the P-type channel region 6 , and the gate electrode 10 is located between the source electrode 8 and the drain electrode 9 ; the P-type diffusio...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a GaN-based HEMT device comprising a substrate layer, an aluminum nitride buffer layer, a gallium nitride channel layer, an Al(ln,Ga,Sc)N barrier layer and a silicon nitride passivation layer which are laminated from the bottom to the top in turn. The GaN-based HEMT device also comprises a P-type channel region which is arranged in the gallium nitride channel layer and theAl(ln,Ga,Sc)N barrier layer, a P-type diffusion region which is arranged in the Al(ln,Ga,Sc)N barrier layer, a source electrode and a drain electrode which are arranged on the Al(ln,Ga,Sc)N barrier layer, and a gate electrode which is arranged on the Al(ln,Ga,Sc)N barrier layer, wherein the P-type diffusion region is arranged between the gate electrode and the drain electrode. The invention also discloses a preparation method of the GaN-based HEMT device. The gallium nitride channel layer etching process involved in the manufacturing process of the GaN-based HEMT device relying on the etchingprocess in the prior art is omitted and changed into the ion injection process so that the consistency of the GaN-based HEMT device manufacturing process can be enhanced.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a GaN-based HEMT device and a preparation method thereof. Background technique [0002] Wide bandgap semiconductor GaN material has become an ideal material for a new generation of semiconductor power devices due to its characteristics of large bandgap width, high critical breakdown electric field, and high electron saturation velocity. In recent years, the GaN-based HEMT device structure represented by Al(ln, Ga, Sc)N / GaN, which generates a high two-dimensional electron gas through spontaneous polarization and piezoelectric polarization, has become the mainstream GaN-based HEMT device material structure . [0003] Since the working mode of Al(ln, Ga, Sc)N / GaN devices is mostly a depletion device, in the switching circuit, the power consumption and the complexity of the design are increased. The GaN-based HEMT device can improve the safety of circuit operation, so the Ga...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/335
CPCH01L29/0619H01L29/66462H01L29/7786
Inventor 刘洪刚常虎东孙兵袁志鹏肖冬萍
Owner WAYTHON INTELLIGENT TECH SUZHOU CO LTD