Semiconductor device and manufacturing method thereof, and electronic device including same

Abstract

The invention discloses a semiconductor device. The semiconductor device includes a substrate; a vertical active area formed on the substrate, wherein the vertical active area includes a first source / drain region, a channel region, and a second source / drain region, and the first source / drain region includes a horizontal extension portion extending out of the active area above the first source / drain region; gate stack formed on an outer periphery of the channel region, wherein the gate stack includes a horizontal extension portion; a stack contract portion from a position above the horizontal extension portion of the first source / drain region to the horizontal extension portion of the first source / drain region, wherein the stack contact portion includes three structures which are vertically and successively arranged; and the three structures include a lower portion, an intermediate portion, and an upper portion, wherein the lower portion at least includes elements identical to elements forming the first source / drain region, the intermediate portion at least includes elements identical to elements forming the channel region, and the upper portion at least includes elements identical to elements forming the second source / drain region.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a vertical type semiconductor device, a method of manufacturing the same, and an electronic device including such a semiconductor device. . Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, reducing the area occupied by the horizontal device generally requires the area occupied by the source, drain and gate to be reduced, which deteriorates the performance of the device (for example, increased power consumption and resistance), so the horizontal device The area is not easy to further reduce. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, compar...

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Problems solved by technology

Due to this arrangement, reducing the area occupied by the horizontal device generally requires the area occupied by the source, drain and gate to be reduced, which deteriorates the performance of the device (for example, increased power consumption and resistance), so the horizontal device Difficult to further reduce the area

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