RGBY miniature projector
A technology of micro projector and projection device, applied in the directions of instruments, optics, electrical components, etc., can solve the problems of complex optical structure of micro projector, and achieve the effects of small size, flexible control and low energy consumption
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Embodiment 1
[0032] See figure 1 , figure 1 A schematic diagram of the device structure of a RGBY micro-projector provided by an embodiment of the present invention; the RGBY micro-projector includes a plurality of RGBY LED light sources 10, a condenser lens 20, a light modulator 30, and a projection device sequentially arranged on the same optical path 40, wherein it further includes a light driver 50 and a light modulator 70, the light driver 50 is electrically connected to the RGBYLED light source 10 and the light modulator 70 respectively.
[0033] Wherein, the optical modulator is driven in a field sequential manner.
[0034] Wherein, a light sensor is also included, and the light sensor is electrically connected with the light driver.
[0035] Wherein, the photosensor is a photosensitive diode.
[0036] Wherein, the optical driver includes an image processor, a control IC, and a light source optical driver connected in sequence.
[0037] Wherein, the light modulator is a liquid c...
Embodiment 2
[0046] See figure 2 , figure 2 It is a schematic diagram of the working principle of an optical driver of an RGBY micro-projector provided by the embodiment of the present invention; this embodiment focuses on the detailed description of the four-primary-color LED chip on the basis of the above-mentioned embodiments. Specifically, including:
[0047]The blue light structure 10 includes a blue light buffer layer 101, a blue light stabilizing layer 102, a blue light n-type layer 103, a blue light active layer 104, a blue light blocking layer 105, and a blue light p-type layer 106 which are sequentially stacked on the substrate 11; The first red light structure 21, the first green light structure 31, the second red light structure 22, and the second green light structure 32 disposed on the blue light buffer layer 101 are located in the blue light p-type layer 106, the The first red light structure 21, the first green light structure 31, the second red light structure 22, and ...
Embodiment 3
[0059] In this embodiment, on the basis of the above embodiments, the detailed description will focus on the preparation method of the RGBY four-primary-color LED chip. Specifically, include the following steps:
[0060] S01: Select a SiC substrate 11, and the material of the substrate 11 may be sapphire or SiC.
[0061] S02: Growth of blue light structure 10. See Figure 4 , Figure 4 A schematic structural diagram of a blue light structure of an RGBY four-primary-color LED chip provided in an embodiment of the present invention; the specific steps include:
[0062] S021: growing a blue light GaN buffer layer 101 with a thickness of 3000-5000 nm on the substrate 11 at a growth temperature of 400-600°C;
[0063] Preferably, the growth temperature is 500° C., and the thickness of the blue GaN buffer layer 101 is 4000 nanometers.
[0064] S022: raising the temperature to 900-1050°C, growing a blue GaN stable layer 102 with a thickness of 500nm-1500nm on the blue GaN buffer ...
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