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Secondary charging method of mono-crystal furnace

A technology of secondary feeding and single crystal furnace, which is applied in the directions of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problems that single crystal silicon rods are not involved, so as to improve the effective quality, increase the utilization rate, The effect of thermal stress relief

Active Publication Date: 2018-06-15
ANHUI HUAXIN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this application only introduces the general process of putting the second batch of silicon material into the crucible, how to improve the existing process so as to improve the purity of the drawn single crystal silicon rod does not involve

Method used

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  • Secondary charging method of mono-crystal furnace
  • Secondary charging method of mono-crystal furnace
  • Secondary charging method of mono-crystal furnace

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Experimental program
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Effect test

Embodiment 1

[0055] combine Figure 1~5 , the single crystal furnace secondary charging system of the present embodiment comprises a single crystal furnace main body and a secondary charging device, the single crystal furnace main body includes a furnace cylinder 11, an isolation chamber 7 and an auxiliary chamber 6, and the upper part of the furnace cylinder 11 is a furnace cylinder neck mouth 9, the furnace cylinder neck 9 communicates with the auxiliary chamber 6 above through the isolation bin 7, and the furnace cylinder neck 9 is provided with an isolation valve 8; the furnace cylinder 11 is provided with a quartz crucible 12, and the bottom of the quartz crucible 12 is connected The supporting part 14 with lifting and rotating functions is connected, a heater 13 is provided around the quartz crucible 12, and a guide tube 16 is provided above the quartz crucible 12, and the guide tube 16 is a tube whose diameter gradually decreases from top to bottom. body; the upper part of the furna...

Embodiment 2

[0063] The single crystal furnace secondary charging system of the present embodiment, its structure and embodiment 1 are basically the same, and its difference is: the top 2mm of the molybdenum nut 301 of quartz cone 4 upper side apart from quartz cone 4, the quartz cone 4 Its bottom of the molybdenum nut 301 on the lower side is apart from the bottom 4mm of the molybdenum connecting rod 3; The included angle is 55°.

Embodiment 3

[0065] combine Figure 6-10 , a secondary charging method of the present embodiment using the single crystal furnace secondary charging system described in Example 1, comprising the following steps,

[0066] Step ST1, preparation stage;

[0067] Use absolute ethanol to wipe the charging cart, molybdenum feeding cylinder 1, stainless steel sleeve 2, molybdenum connecting rod 3 and quartz cone 4;

[0068]Assemble the secondary feeding device, wherein the quartz cone 4 is first clamped on the molybdenum connecting rod 3 through the molybdenum nuts 301 on the upper and lower sides of the quartz cone 4, and then the molybdenum nuts on the lower side of the quartz cone 4 are loosened 301, so that the bottom of the molybdenum nut 301 on the lower side of the quartz cone 4 is apart from the bottom 3~4mm of the molybdenum connecting rod 3 (3mm is taken in this embodiment), the molybdenum nut 301 on the upper side of the quartz cone 4 is loosened, so that the quartz cone The bottom of...

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Abstract

The invention discloses a secondary charging method of a mono-crystal furnace and belongs to the field of preparation of monocrystalline silicon. The secondary charging method disclosed by the invention comprises the following steps: step ST1, a preparation phase; step ST2, a positioning phase of a secondary charging device; step ST3, a jog charging phase; step ST4, a secondary charging device taking-out phase. By adopting the secondary charging method of the mono-crystal furnace, a function of adding raw materials at any time in a process of drawing a monocrystalline silicon rod by the mono-crystal furnace is mainly realized.

Description

[0001] The patent application of the present invention is a divisional application with the application number: 2015109989358. The filing date of the original application is: 2015-12-25. The name of the invention is: a secondary feeding system for a single crystal furnace. technical field [0002] The invention relates to the field of single crystal silicon preparation, and more specifically relates to a method for secondary charging of a single crystal furnace. Background technique [0003] Single crystal furnace is a professional equipment for producing single crystal silicon rods. In the traditional production process, the polysilicon raw material is put into a quartz crucible and melted at one time, and the monocrystalline silicon rod is drawn by the Czochralski method after the melting is completed. The effective mass of monocrystalline silicon rods is limited by the maximum feeding amount, which is determined by the size of the quartz crucible. The weight of the bulk s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/02C30B29/06
CPCC30B15/02C30B29/06
Inventor 马四海刘长清张笑天马青丁磊芮彪朱光开张静张良贵向贤平
Owner ANHUI HUAXIN SEMICON CO LTD
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