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31results about How to "Release thermal stress" patented technology

Laser additive device and additive manufacturing method thereof

InactiveCN109175364AUniform distribution of energy and temperature fieldsStir wellAdditive manufacturing apparatusIncreasing energy efficiencyPower flowHigh frequency
The invention provides a laser additive device which comprises a rotary light beam laser system, a high-frequency short pulse laser system and an auxiliary current system. The rotary light beam lasersystem outputs rotary continuous laser light, and the continuous laser light is used for melting and depositing wires to the surface of a base material; the high-frequency short pulse laser system outputs high-frequency short pulse laser light, and the high-frequency short pulse laser light is used for inputting a pulse laser beam into a molten bath. The auxiliary current system is used for enabling the wires and the molten bath to form a current loop, and therefore strong electromagnetic force is directly produced in the molten bath. The rotary light beam laser system comprises a continuous laser generator, a first high precision mechanical arm and a continuous laser device laser head. The high-frequency short pulse laser system comprises a high-frequency short pulse laser generator, a high-frequency short pulse laser head and a second high precision mechanical arm. The defects that element segregation is likely to be caused in the molten bath, gas cannot be exhausted, the structure is uneven, and heat stress is concentrated can be overcome.
Owner:JIANGSU UNIV

Manufacturing method of flexible thermo-electric device and manufactured flexible thermo-electric device

The invention relates to a manufacturing method of a flexible thermo-electric device and the manufactured flexible thermo-electric device. The method comprises the steps that a red copper wire mesh with high electric conduction performance is adopted as an electrode material, the red copper wire mesh is directly fixed to a die substrate, high-temperature-resisting silica gel is adopted as a flexible substrate to replace a traditional ceramic substrate, P-N thermo-electric particles alternately fall into a grid die device, on the basis of achieving overall welding, line cutting of design patterns is carried out on cold and hot end faces, and each pair of P-N semiconductor thermo-electric particles is of a parallel-connection independent structure in electrology and series-connection thermology; basic curing operation of high-temperature-resisting flexile insulation is carried out on a device achieving adjustable gluing thickness, and the flexible device is obtained. The flexible device can be bent by a large angle, a semiconductor material body is not changed, semiconductor material components obtained after doping modification are not influenced, the application occasion of the thermo-electric device is widened, the device is not restricted to plane occasions any more, and heat stress generated in the work process of the thermo-electric device is released.
Owner:FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI

Hollow layering steam injecting system

The invention discloses a hollow layering steam injecting system. An heat preservation oil pipe is connected below a well head device; the lower end of the heat preservation oil pipe is connected with a telescopic pipe; the lower end of the telescopic pipe is connected with a steam distributing pipe column part; the steam distributing pipe column part comprises an anchor, an oil pipe, packers, an oil pipe releaser and a hollow steam injecting valve; the anchor is positioned at the uppermost end of the steam distributing pipe column part; the lower end of the telescopic pipe is connected with the anchor; in the steam distributing pipe column part, a top packer is arranged above a top oil layer, and is connected to the lower end of the anchor; a middle packer is arranged in a gap of adjacent two oil layers; the oil pipe, the hollow steam injecting valve and the oil pipe releaser are connected between adjacent two packers; and the lower end of the middle packer above a lowermost oil layer is connected with the oil pipe, the hollow steam injecting valve, the oil pipe and a plug. The hollow layering steam injecting system can preferably release thermal stress of a pipe column, is more accurate and effective in steam injecting effect, prevents the steam injecting valve from scaling to block a steam injecting channel, and increases the inner diameter of the pipe column for convenient dropping and fishing.
Owner:PETROCHINA CO LTD

Rotating limiting support for thermal pipe and rotating limiting method of support

InactiveCN106151686AReduce thrustAllowable free angular displacementPipe supportsSupporting systemEngineering
The invention discloses a rotating limiting support for a thermal pipe. The support comprises a pipe clamp, rotating shafts and a supporting system, wherein the supporting system comprises a supporting frame and a supporting plate; the supporting frame comprises a transverse supporting frame and longitudinal supporting frames; the rotating shafts comprise an upper rotating shaft and a lower rotating shaft, the lower end of the upper rotating shaft is welded at the upper end of the pipe, and the upper end of the lower rotating shaft is welded at the lower end of the pipe; rotating shaft grooves are located in the supporting system; and the rotating shafts are sleeved with the rotating shaft grooves. The support overcome defects that only linear displacement in one or two directions can be limited and angular displacement is limited on the premise that the linear displacement of the position of a supporting point is limited in the prior art are overcome; and the rotating limiting support has the advantages that the rotating shafts are increased on the pipe clamp, and limiting supporting is designed, so that the linear displacement of the pipe in a heated state is limited, the angular displacement is allowed on a certain plane, and partial swelling stress is released. The invention further discloses a rotating limiting method of the rotating limiting support for the thermal pipe.
Owner:CENT SOUTHERN CHINA ELECTRIC POWER DESIGN INST CHINA POWER ENG CONSULTING GROUP CORP

Method for high-speed laser cladding of Mo-Cu alloy layer on copper substrate

The invention discloses a method for laser cladding of a Mo-Cu alloy layer on a copper substrate. The method comprises the following steps: 1) drying Mo powder and Cu powder in vacuum; 2) polishing and cleaning a cladding substrate; (3) performing cladding with a high-speed laser cladding device, during cladding, adopting double-cylinder powder feeding, and controlling the powder feeding amount of the Mo powder and Cu powder respectively to achieve the purpose of gradient cladding, wherein the mass ratio of Mo to Cu of the cladding alloy layer is sequentially increased in a gradient mode, in addition, the cladding substrate is loaded on a high-frequency vibration platform, and the high-frequency vibration platform generates platform type vibration during cladding. Gradient cladding is adopted, the binding force between a cladding layer and a base body and the strength of the cladding layer are improved, and the uniformity of Mo and Cu components and structures in the cladding layer is improved through double-cylinder powder feeding. High-frequency vibration in cladding effectively releases thermal stress in the cladding layer, improves the strength of the cladding layer, improves the fluidity of a molten pool, reduces air hole shrinkage in the cladding layer, improves the strength of the cladding layer and the like.
Owner:ZHEJIANG UNIV

Parallel structure sealing electrode and assembly method thereof

The invention is a parallel structure sealing electrode and an assembly method thereof. The parallel structure sealing electrode saves space and realizes good sealing of a liquid metal battery for long term working under a high temperature environment. The electrode includes a battery cover plate, an external transition ring, an insulation structure, an internal transition ring, an electrode core and a liquid sealing bowl holder that are disposed coaxially. Sealing insulation connection of the battery cover plate, the insulation material and the electrode core is achieved through the external transition ring and the internal transition ring, the setting of the internal transition ring increases a stress release structure, and the battery cover plate upper end face is adopted as the positioning end face, a positioning clamp stand disposed on the electrode core is utilized to position the electrode core, the distance from the positioning clamp stand lower surface to the electrode core lower surface ensures the distances from the electrode core to a battery internal active material, the liquid sealing bowl holder is utilized to realize isolation of the battery internal active material, and the connection of the external transition ring, the insulation structure and the internal transition ring is protected by means of liquid sealing, thereby avoiding corrosion to the sealing electrode, and guaranteeing a lasting battery life.
Owner:CHINA XD ELECTRIC CO LTD

Improved device and method for growing high-temperature oxide crystals through heat exchange method with seed crystals arranged on top

The invention discloses a device and a method for growing a high-temperature oxide crystal by an improved heat exchange method with a seed crystal arranged on the top, which are characterized in that a kyropoulos method, a Czochralski method (CZ), a heat exchange method (HEM), a temperature gradient method (TGT), a Bridgman-Stockbarger method and a kyropoulos method (KY method) are combined together; according to the special high-temperature vacuum crystal furnace, gas flows in from the center of the top of a hearth from top to bottom, absolute uniform and symmetrical flow out from the center of the bottom is ensured through flow planning, and gradients of all parts in different growth stages are achieved by adjusting the gas flow in different stages and the pumping speed of a vacuum pump. The method comprises the following steps: charging a furnace, vacuumizing, introducing flowing protective gas, heating and melting materials, washing seed crystals, changing the gas inlet and outlet proportion, carrying out real-time gradient adjustment, seeding by a pulling method, carrying out a hole shrinkage process, increasing the shouldering process of a heat exchange method for increasing the gas flow, controlling a crystal growth interface (adjusting a convex interface to be slightly convex or close to a flat interface), and carrying out equal-diameter growth by combining HEM heat exchange with a KY technology (namely carrying out equal-diameter growth by combining HEM heat exchange with a KY technology). A weighing diameter control technology is optimized; amp is ended through a KY method; and removing the crucible, and performing in-situ annealing by gradually increasing the pressure of the protective gas. According to the invention, the existing method is combined to produce the large-size high-temperature oxide crystal.
Owner:黄鼎雯 +2

A high-power Hall thruster discharge chamber assembly based on flexible connection

The invention discloses a high-power Hall thruster discharge chamber assembly based on flexible connection, which is composed of a hand-in-hand inner ceramic ring, a hand-in-hand outer ceramic ring, an outer pressure ring, an inner pressure ring and an anode with grooves; Both the insert-type inner ceramic ring and the outer ceramic ring are closed-loop rings composed of multiple ceramic pieces connected end to end; each ceramic piece is an arc-shaped structure with a matching head protrusion and tail depression; the insert-type inner ceramic ring The lower end surfaces of the inner and outer ceramic rings of the inserting type have protrusions, which are embedded in the inner and outer annular grooves provided by the anode; the upper end surfaces of the inner and outer ceramic rings of the inserting type are pressed by the inner and outer pressure rings; the inner and outer pressure rings The other end is fixed on the inner and outer magnetic pole plates; the pressing of the inner pressure ring and the outer pressure ring is elastic. The invention can realize the release of thermal stress under the condition of high-power discharge, ensures the stable and reliable operation of the thruster, and avoids the technical difficulty of one-time forming under large size.
Owner:LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH

A grid used in a grid-controlled pulse traveling wave tube electron gun and its manufacturing process

The invention discloses a grid used in a grid-controlled pulse traveling wave tube electron gun and a manufacturing process thereof. The grid includes a grid substrate made of molybdenum, a gradient functional layer formed on the grid substrate, and a composite anti-grid electron emission film formed on the gradient functional layer; wherein the gradient functional layer is made of Nb or Ta, and the composite The anti-grid electron emission film is made of high melting point material with a work function greater than 4eV. The manufacturing process includes the following steps: (1) degassing the formed molybdenum grid substrate at 700-1000°C in high-temperature vacuum; (2) preparing a gradient function on the grid substrate by ion implantation and vacuum deposition coating method (3) Prepare a composite anti-grid electron emission film on the gradient functional layer by ion implantation and vacuum deposition coating method; (4) Perform high-temperature heat treatment on the prepared grid. The grid net of the invention can suppress the grid electron emission of the grid-controlled pulse traveling wave tube, and improve the working reliability and service life of the grid-controlled pulse traveling wave tube.
Owner:GRIMAT ENG INST CO LTD

A preparation method of a flexible thermoelectric device and the prepared flexible thermoelectric device

The invention relates to a manufacturing method of a flexible thermo-electric device and the manufactured flexible thermo-electric device. The method comprises the steps that a red copper wire mesh with high electric conduction performance is adopted as an electrode material, the red copper wire mesh is directly fixed to a die substrate, high-temperature-resisting silica gel is adopted as a flexible substrate to replace a traditional ceramic substrate, P-N thermo-electric particles alternately fall into a grid die device, on the basis of achieving overall welding, line cutting of design patterns is carried out on cold and hot end faces, and each pair of P-N semiconductor thermo-electric particles is of a parallel-connection independent structure in electrology and series-connection thermology; basic curing operation of high-temperature-resisting flexile insulation is carried out on a device achieving adjustable gluing thickness, and the flexible device is obtained. The flexible device can be bent by a large angle, a semiconductor material body is not changed, semiconductor material components obtained after doping modification are not influenced, the application occasion of the thermo-electric device is widened, the device is not restricted to plane occasions any more, and heat stress generated in the work process of the thermo-electric device is released.
Owner:FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI

A secondary charging system for a single crystal furnace

The invention discloses a single crystal furnace secondary charging system and a charging method thereof, which belong to the field of monocrystalline silicon preparation. The single crystal furnace secondary charging system comprises a single crystal furnace main body and a secondary charging device, the secondary charging device comprises a molybdenum charging cylinder, a stainless steel sleeve, a molybdenum connecting rod and a quartz pyramid, the stainless steel sleeve is erected on a center position in the molybdenum feeding cylinder; a shape of the quartz pyramid is an equilateral triangular pyramid, an equilateral triangular pyramid groove is arranged at bottom of the quartz pyramid; an included angle of the side surface and the bottom of the quartz pyramid is alpha, the included angle of the side surface and the bottom of the equilateral triangular pyramid groove is beta, and beta is less than alpha by 5 DEG. The secondary charging method comprises the following steps: 1) preparing; 2) positioning of the secondary charging device; 3) charging; and 4) taking the secondary charging device. The charging system mainly realizes a function for adding the raw materials at any time during a monocrystalline silicon rod drawing process by the single crystal furnace.
Owner:安徽华芯半导体有限公司

Grid used in grid-controlled pulse traveling wave tube electron gun and manufacturing process thereof

The invention discloses a grid used in a grid-controlled pulse traveling wave tube electron gun and a manufacturing process thereof. The grid includes a grid substrate made of molybdenum, a gradient functional layer formed on the grid substrate and a composite anti-grid electron emission film formed on the gradient functional layer. The gradient functional layer is prepared by Nb or Ta. The composite anti-grid electron emission film is prepared by using a high-melting point material having a work function of more than 4 eV. The manufacturing process includes the following steps: (1) performinghigh temperature vacuum degassing on the formed grid substrate of a molybdenum material at 700-1000 DEG C; (2) preparing the gradient functional layer on the grid substrate by using ion implantationand vacuum deposition coating; (3) preparing the composite anti-grid electron emission film on the gradient functional layer by using the ion implantation and vacuum deposition coating; and (4) performing high temperature heat treatment on the prepared grid. The grid of the invention can suppress grid electron emission of a grid-controlled pulse traveling wave tube and improve the working reliability and service life of the grid-controlled pulse traveling wave tube.
Owner:GRIMAT ENG INST CO LTD
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