Method for removing surface pollution of polished silicon wafer with normal-temperature HF acid

A silicon wafer surface, room temperature technology, applied in the direction of using liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., to achieve the effect of being conducive to cleaning, moderating the reaction, and enhancing the cleaning effect

Inactive Publication Date: 2018-06-15
上海中欣晶圆半导体科技有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problems existing in the prior art, the present invention provides a novel cleaning process, which improves the problems encountered in the actual production process on the basis of the existing standard cleanin

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  • Method for removing surface pollution of polished silicon wafer with normal-temperature HF acid
  • Method for removing surface pollution of polished silicon wafer with normal-temperature HF acid

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[0025] The present invention will be further described below in conjunction with the drawings.

[0026] The specific method introduced by the present invention is as follows:

[0027] 1. Chemical reagent: 49%-51% hydrofluoric acid stock solution, surface active reagent (English abbreviation TSC-1) is added to the cleaning tank in a certain proportion.

[0028] 2. Two tanks are added in front of the traditional standard cleaning and washing machine, namely the chemical tank made of Teflon and the pure water tank made of quartz.

[0029] 3. Mixing of stock solution: 49% of the hydrofluoric acid stock solution is weighed according to the ratio of 0.8% to 1.2% of the volume of the liquid tank body and the stock solution is weighed in the weighing tank; the surfactant (English abbreviation TSC-1) is in accordance with the tank Weigh the stock solution at a ratio of 0.1-0.2% of the body volume and place it in a weighing barrel.

[0030] 4. Mix the two solutions and put them in a Teflon liqui...

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Abstract

The invention provides a method for removing surface pollution of a polished silicon wafer with a normal-temperature HF acid. The method comprises the steps of additionally arranging two grooves, namely a liquid groove and a pure water groove, in front of a standard cleaning machine table; weighing 49-51% of hydrofluoric acid solution according to a proportion of 0.8-1.2% of volume of the liquid groove; weighing a surfactant according to a proportion of 0.1-0.2% of the volume of the liquid groove; adding the weighed hydrofluoric acid solution and the weighed surfactant into the liquid groove,and performing full mixing; placing the silicon wafer in the liquid groove, and cleaning the silicon wafer under a normal temperature; placing the cleaned silicon wafer in the pure water groove, and cleaning the silicon wafer with pure water under the normal temperature; and placing the cleaned silicon wafer in the standard cleaning machine for cleaning. The surface pollution of the polished silicon wafer is removed by the normal-temperature HF acid, so that the surface cleanliness is greatly improved, and the demands of different clients are satisfied.

Description

technical field [0001] The invention relates to the field of cleaning technology of semiconductor polished silicon wafers, in particular to a method for removing surface pollution of polished silicon wafers by using normal temperature HF acid. Background technique [0002] After the silicon wafer is polished, due to the presence of abrasives, organic waxes and other additives on the back, various impurities, such as particles, metals, organic matter, etc., must be removed by cleaning to prevent impurities from causing fatal defects in the subsequent process [0003] The traditional standard cleaning process adopts the following methods: mixed solution of ammonia and hydrogen peroxide - mixed solution of ammonia and hydrogen peroxide - mixed solution of ammonia and hydrogen peroxide - ultrapure water - ultrapure water - mixed solution of ammonia and hydrogen peroxide - mixed solution of ammonia and hydrogen peroxide - Ultra-pure water-ultra-pure water-silicon wafers are dried...

Claims

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Application Information

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IPC IPC(8): H01L21/02B08B3/08
Inventor 金文明贺贤汉温海峰
Owner 上海中欣晶圆半导体科技有限公司
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