Press ring device for physical vapor deposition equipment

A technology of physical vapor deposition and equipment, which is applied in the field of pressure ring devices, can solve the problems of indistinguishable alignment marks of wafers, inability to complete normal process, and inconvenient adjustment, so as to reduce sticking phenomenon, simple structure, and avoid The effect of sticky film

Inactive Publication Date: 2018-06-19
张铭泽
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the physical vapor deposition process, the physical vapor deposition process (such as aluminum deposition process) sometimes needs to deposit 3~4 microns thick, thicker deposition materials (such as aluminum) will fill the alignment marks of the wafer, making the wafer The alignment mark of the circle cannot be distinguished, which leads to the inability to complete the normal process of the subsequent photolithography and other processes due to the difficulty of alignment; in addition, the inner diameter of the ring body needs to be determined according to the size of the wafer, and the existing pressure ring device is inconvenient to adjust

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Press ring device for physical vapor deposition equipment
  • Press ring device for physical vapor deposition equipment
  • Press ring device for physical vapor deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The invention provides a pressure ring device used in physical vapor deposition equipment.

[0034] Such as Figure 1-7As shown, the pressure ring device of the physical vapor deposition equipment according to the embodiment of the present invention includes an annular body 1, and the top end of the annular body 1 is connected with a fixed platform 4, and the fixed platform 4 communicates with the annular body 1, And the bottom of the fixed table 4 is provided with a plurality of annular grooves 8, and the area enclosed between two adjacent grooves 8 is equal, the inner ring edge of the ring body 1 is fixedly connected with an extension Out of the plate 5, the number of the protruding plates 5 is four, the arc lengths formed between two adjacent protruding plates 5 are equal, and two adjacent protruding plates 5 are provided with There is a protruding platform 7, wherein, the protruding platform 7 and the extension plate 5 are all parallel to the plane of the annular b...

Embodiment 2

[0043] The protruding plate, the protruding platform and the annular body are integrally formed, and a new material is used; the new material is prepared according to the following process:

[0044] 1) According to weight percentage, the ratio of each raw material is as follows: Mn: 1.01; Ti: 0.71; Si: 0.43; Ni: 0.16; Cr: 0.12; B: 0.08; Co: 0.07; Zn: 0.05; : 0.005; the balance is Al;

[0045] 2) Put Al in No. 1 crucible A, under the protection of argon, heat up to 750°C at a rate of 5°C / S to obtain a melt; take Mn, Ti, Si, Ni, Cr, B, Co, Zn , Nb and Mo were placed in the No. 2 crucible, and the temperature was raised to 400°C at a heating rate of 2°C / S, and then argon was introduced for protection, and the temperature was continued to be raised to 750°C at a rate of 2°C / S, and kept for 10 minutes; Mix the materials in No. 1 crucible and No. 2 crucible, raise the temperature to 850°C, and refine for 3 minutes; then use a die-casting machine to die-cast it into the mold, the in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a press ring device for physical vapor deposition equipment. The press ring device comprises an annular body, wherein a circular fixed table is connected to the top end of theannular body; the circular fixed table communicates with the annular body, a plurality of annularly-formed clamping grooves are formed in the bottom of the circular fixed table, and the area encircledbetween each two adjacent clamping grooves is equal; and stretching plates are fixedly connected to the edge position of the inner ring of the annular body. The press ring device has the following beneficial effects: components comprising a plurality of the stretching plates and a plurality of bulged tables are added to the inner ring of the annular body, and during working, only the bulged tables of the annular body make contact with a wafer, so that the contact area of the press ring device and the wafer is reduced. Through a locking disc arranged on the annular body, a strip-shaped plate on the annular body is enabled to relatively slide with a groove by virtue of the rotation of an adjustment hand wheel, so that the diameter of the annular body can be adjusted, and the dimensions of different wafers can be adapted.

Description

technical field [0001] The invention relates to the technical field of physical vapor deposition equipment, in particular to a pressure ring device for physical vapor deposition equipment. Background technique [0002] The metallization process is the process of depositing a metal film on an insulating dielectric film during the chip manufacturing process, followed by photolithography and etching to form a pattern, and filling the pattern to form interconnected metal lines and through holes for integrated circuits. In the metallization process, aluminum is widely used in semiconductor processes as a traditional interconnection wire. [0003] The physical vapor deposition method is the most important method for depositing and forming aluminum interconnection lines in the semiconductor process. It is a physical and chemical process that is transferred to the target atoms, so that the target atoms escape and deposit on the wafer substrate material. The gas ion argon continu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/50C23C14/04C22C21/00C22C1/02
CPCC23C14/50C22C1/026C22C21/00C23C14/04
Inventor 张铭泽张立波谢青
Owner 张铭泽
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap