Approximate-junction microflow embedded high-efficient GaN transistor and manufacturing method thereof

Abstract

The invention relates to an approximate-junction microflow embedded high-efficient GaN transistor and a manufacturing method thereof. The GaN transistor sequentially comprises an active region functional layer, a barrier layer, a buffer layer and a substrate layer from top to bottom, wherein the active functional layer comprises a grid, a source and a drain, and a micro fluid passage is arranged in the substrate layer and is arranged on an approximate-junction region below an active region. A fluid cooling technology is introduced into a chip, the high-efficiency cooling capability of the approximate-junction region is achieved, and the problem of heat accumulation of the active region of a large-power GaN device is solved; and compared with a traditional GaN device, the power density of the GaN transistor can be improved by 2 times or above, the maximum output power of the device is greatly improved, and relatively high reliability is maintained.

Description

technical field [0001] The invention belongs to the technical field of thermal management development of semiconductor devices, in particular to a near-junction microflow embedded gallium nitride transistor with high efficiency heat dissipation and a manufacturing method thereof. technical background [0002] The third-generation semiconductor power devices represented by gallium nitride have demonstrated their excellent high-power application characteristics. In practical applications, gallium nitride chips are based on SiC substrates, and the power density of power devices has only reached its theoretical value. One-fifth of GaN's high-power characteristics are far from being brought into play. This is mainly because high-power microwave devices will generate a large amount of heat accumulation while outputting high power, especially for microwave power devices with an output power of hundreds of watts or even thousands of watts, which will cause a sharp rise in the juncti...

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Problems solved by technology

This is mainly because high-power microwave devices will generate a large amount of heat accumulation while outputting high power, especially for microwave power devices with an output power of hundreds of watts or even thousands of watts, which will cause a sharp rise in the junction temperature of the device and cause its device Severe degradation in performance and reliability

[0003] At present, gallium nitride-based power devices are mainly epitaxially grown on substrate materials such as silicon carbide and sapphire, and these substrate materials have low thermal conductivity. The heat dissipation problem seriously limits the performance of gallium nitride devices, so nitride The development of thermal management of gallium semiconductor devices has become a technical bottleneck to solve their high-power applications

Especially in view of the special needs of the current equipment system for ultra-high power and highly integrated devices, the existing passive heat dissipation technology cannot solve the problem of heat accumulation in the active area of ​​the system chip due to its own physical characteristics

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