Approximate-junction microflow embedded high-efficient GaN transistor and manufacturing method thereof

Abstract

The invention relates to an approximate-junction microflow embedded high-efficient GaN transistor and a manufacturing method thereof. The GaN transistor sequentially comprises an active region functional layer, a barrier layer, a buffer layer and a substrate layer from top to bottom, wherein the active functional layer comprises a grid, a source and a drain, and a micro fluid passage is arranged in the substrate layer and is arranged on an approximate-junction region below an active region. A fluid cooling technology is introduced into a chip, the high-efficiency cooling capability of the approximate-junction region is achieved, and the problem of heat accumulation of the active region of a large-power GaN device is solved; and compared with a traditional GaN device, the power density of the GaN transistor can be improved by 2 times or above, the maximum output power of the device is greatly improved, and relatively high reliability is maintained.

Description

technical field [0001] The invention belongs to the technical field of thermal management development of semiconductor devices, in particular to a near-junction microflow embedded gallium nitride transistor with high efficiency heat dissipation and a manufacturing method thereof. technical background [0002] The third-generation semiconductor power devices represented by gallium nitride have demonstrated their excellent high-power application characteristics. In practical applications, gallium nitride chips are based on SiC substrates, and the power density of power devices has only reached its theoretical value. One-fifth of GaN's high-power characteristics are far from being brought into play. This is mainly because high-power microwave devices will generate a large amount of heat accumulation while outputting high power, especially for microwave power devices with an output power of hundreds of watts or even thousands of watts, which will cause a sharp rise in the juncti...

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Problems solved by technology

This is mainly because high-power microwave devices will generate a large amount of heat accumulation while outputting high power, especially for microwave power devices with an output power of hundreds of watts or even thousands of watts, which will cause a sharp rise in the junction temperature of the device and cause its device Severe degradation in performance and reliability

[0003] At present, gallium nitride-based power devices are mainly epitaxially grown on substrate materials such as silicon carbide and sapphire, and these substrate materials have low

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